Abstract:3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decreases to a level below that of the substrate as the impurities are activated by annealing. Therefore the absorption of infrared rays increases and the heating rate becomes faster than that after ion implantation.4. Previously, the difference of the heating rate due to impurity concentration was reported, but now a similar effect is found in ion-implanted layers.
ABSTRACTA new approach for capless rapid thermal an… Show more
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