Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As

Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

“…It is well known that halogen lamp rapid thermal annealing ͑RTA͒ yields better electrical activation than conventional furnace annealing. 3 In the particular case of Si ϩ -implanted In x Ga 1Ϫx As, high values of electrical activation close to 100% have been reported for certain implantation/annealing conditions. [3][4][5][6] While it is generally assumed that the pure In x Ga 1Ϫx As crystal is recovered after RTA, we have checked for possible alterations of the InGaAs/InP epilayers occurring during RTA under standard conditions for device processing.…”

“…3 In the particular case of Si ϩ -implanted In x Ga 1Ϫx As, high values of electrical activation close to 100% have been reported for certain implantation/annealing conditions. [3][4][5][6] While it is generally assumed that the pure In x Ga 1Ϫx As crystal is recovered after RTA, we have checked for possible alterations of the InGaAs/InP epilayers occurring during RTA under standard conditions for device processing. Such alterations may change the optical and electrical properties of the epilayers and consequently affect the quality of the devices produced by the implantation and annealing processes.…”

“…Phosphorus impurities in antisite positions of the In x Ga 1Ϫx As crystal act as double donors and, therefore, the phosphorus diffusion may contribute to increase the free-electron density in the annealed samples, which could explain the anomalous high electrical activations observed in implanted and annealed In 0.53 Ga 0.47 As samples. [3][4][5][6] In fact, this effect may be even more important in implanted samples where a significant fraction of the group-III atoms have been displaced by the ion beam bombardment and P may tend to occupy Ga sites upon annealing.…”

High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices

“…The electrical activation is about 90% for the intermediate doses, decreasing for both lower and higher doses. The reduction in activation for the highest doses is usually explained by the amphoteric nature of Si in In 0.53 Ga 0.47 As, the stoichiometric disturbances produced in the crystal lattice, 19,20 and the significant implantation damage oriented at these doses. However, as shown in Fig.…”

“…Ion implantation of Si and Se has been used to produce n-type layers into In 0.53 Ga 0.47 As, [6][7][8] but Si is the most commonly refereed due to its low mass, which produces less lattice damage 7 and a flexible ion range. However, there are only few published reports related to the analysis of both the electrical and optical properties of n-type implanted layers.…”