Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As

N-type Doping Strategies for InGaAs

“…Si is a predominant n-type dopant for III-As materials and historically has been reported to have limited diffusivity upon thermal processing [13,79,80]. More recent reports have shown that Si diffusion is highly concentration dependent [81,82]. Si concentrations above 1-3×10 -19 cm −3 are shown to diffuse very rapidly while Si concentrations below this range are generally immobile as shown in Fig.…”

“…Calculated formation energies of V Ga , Si Ga V Ga and Si Ga with respect to Fermi level in In 0.5 Ga 0.5 As system. Values were used in a previously developed diffusion model [82]. Fig.…”

“…A second nearest neighbor Si III V III pair was selected as the primary mechanism for diffusion in InGaAs, for the calculations. Details of the calculations for defect formation energies were included in a previous work, where the values were integrated in a process model for dopant diffusion prediction [82]. As illustrated in Fig.…”

“…(a) SIMS profiles of as-grown and annealed Si marker layer with 1×10 20 cm −3 peak concentration, ranging from 10 min to 240 min at 650-750°C. (b) SIMS profiles of as-grown and 240 min 650°C annealed Si marker layer with 1×10 19 cm −3 peak concentration[82].…”