Heavily carbon-doped In 0.53 Ga 0.47 As on InP (001) substrate grown by solid source molecular beam epitaxyThe effect of thermal annealing on the net donor concentration and diffusion of Si in In 0.53 Ga 0.47 As is compared for electrically active layers formed by ion implantation versus molecular beam epitaxy (MBE). Upon thermal treatment at temperatures of 700 C or higher for 10 min, both ion implanted and growth-doped substrates converge to a common net donor solubility. These results indicate that while MBE doped substrates typically exhibit higher active concentrations relative to implanted substrates, the higher active Si concentrations from MBE growth are metastable and susceptible to deactivation upon subsequent thermal treatments after growth. Active Si doping concentrations in MBE doped material and ion-implanted materials are shown to converge toward a fixed net donor solubility limit of 1.4 Â 10 19 cm À3 . Secondary ion mass spectroscopy of annealed samples indicates that the diffusivity of Si in MBE doped substrates is higher than those of ion implanted substrates presumably due to concentration-dependent diffusion effects.

A brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×1019/cm3. This has prompted many studies into factors that might affect dopant activation including co-implantation to force site selection, damage and amorphization effects, elevated temperature implants and capping effects. A summary of these results is discussed. With interest in using III-V materials for n-channel devices in future sub 15 nm devices there is also an increasing interest in low energy implants. This suggests the role of surface degradation upon annealing will become even more important. Recent results along these lines are presented.

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A relationship between the electrical activation of Si in ion-implanted In0.53Ga0.47As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In0.53Ga0.47As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems