Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As

Materials Science in Semiconductor Processing

Bomberger

et al. 2017

Section: Si Diffusion Studiesmentioning

confidence: 86%

Section: Dft Calculations Of Ingaas Systemmentioning

confidence: 99%

N-type Doping Strategies for InGaAs

Materials Science in Semiconductor Processing

Bomberger

et al. 2017

“…The presence of vacancy defects is also likely evidenced by the highly concentration dependent nature of Si diffusion in these substrates. 25,57 Silicon is believed to diffuse via a group III vacancy mechanism in InGaAs and GaAs and a large increase in the population of group III vacancies should enhance Si diffusion in InGaAs, as is observed at high doping concentrations. Previous studies of Si diffusion in InGaAs show that at high doping concentration above 2 Â 10 19 cm À3 where electrical activation is saturated, there is a significant amount of diffusion of Si despite Si being inactive at these concentrations, suggesting the presence of a mobile, yet electrically inactive Si III -V III complex.…”

Section: B Origins Of N-type Carrier Saturation In Ingaasmentioning

confidence: 98%

“…Previous implant studies have concluded that Si redistribution upon annealing is minimal but more recent reports have indicated that Si redistribution is heavily concentration dependent above 2 Â 10 19 cm À3 . 2,24,25 The post 5 s RTA Si concentration profiles were measured by SIMS for the highest (6 Â 10 14 cm À2 ) and lowest (3 Â 10 13 cm À2 ) Al þ and P þ co-implant doses and are shown in Fig. 3(a).…”

Section: B Si Diffusionmentioning

confidence: 99%

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Jones

et al. 2015

Elevated temperature, nonamorphizing implants of Si þ , and a second co-implant of either Al þ , P þ , or S þ at varying doses were performed into In 0.53 Ga 0.47 As to observe the effect that individual co-implant species had on the activation and diffusion of Si doping after postimplantation annealing. It was found that Al, P, and S co-implantation all resulted in a common activation limit of 1.7 Â 10 19 cm À3 for annealing treatments that resulted in Si profile motion. This is the same activation level observed for Si þ implants alone. The results of this work indicate that co-implantation of group V or VI species is an ineffective means for increasing donor activation of n-type dopants above 1.7 Â 10 19 cm À3 in InGaAs. The S þ co-implants did not show an additive effect in the total doping despite exhibiting significant activation when implanted alone. The observed n-type active carrier concentration limits appear to be the result of a crystalline thermodynamic limit rather than dopant specific limits. V

“…Si is generally reported to have limited diffusivity in InGaAs but more recent reports suggest that the diffusion of Si in InGaAs is actually heavily concentration dependent. 36 Historically, Si seems to be an attractive dopant for implantation and growth methods of incorporation while Se, Sn, and Te are likely best suited for growth based techniques due to implant damage considerations. Dopant activation.-N-type dopants in InGaAs may come from either group IV or group VI.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (5) Q12mentioning

confidence: 99%

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n⁺-In_0.53Ga_0.47As

ECS J. Solid State Sci. Technol.

Hatem

et al. 2016

Self Cite

An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for electrical activation in heavily Si doped InGaAs and GaAs. Dopant incorporation techniques which require thermal treatment steps to move dopants onto lattice sites like ion implantation and monolayer doping exhibit stable activation up to a limit of ≈1.5 × 1019 cm−3. Growth-based dopant incorporation methods have shown much higher (5 × 1019 cm−3) active concentrations but these activate concentrations are shown in multiple studies to be metastable. Other device specific process-flow constraints with respect to modern CMOS devices which may make some means of dopant incorporation method, or species selection more appropriate for a given application are also discussed.