Application of An Active Gate Driver for Paralleling Operation of Si IGBT and SiC MOSFET

Wei, Yuqi; Du, Xia; Woldegiorgis, Dereje; Mantooth, Alan

doi:10.1109/ecce-asia49820.2021.9479254

Cited by 6 publications

(5 citation statements)

References 13 publications

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“…(a) Insulation systems may be enhanced in future traction motors for use with SiC power MOSFET-based traction converters at the expense of a higher cost; and/or (b) Specially-designed active gate driver circuits may be used at the expense of marginally higher switching losses [43][44][45][46].…”

Section: Discussionmentioning

confidence: 99%

“…Among these, the records corresponding to the acceleration and deceleration on a level track, the acceleration on a maximum positive slope, and regenerative braking on a maximum negative slope are shown in Figures 21-23 In order to comply with the EMC requirements for the traction converters [41] and dv/dt withstand capability of the presently available traction motors [42], slower turn-on and -off times could be obtained by adjusting the gate resistance and gate-to-source capacitance in the gate driver circuit at the expense of slightly higher switching losses. An alternative but more complex and costly improvement technique might be the design and use of an active gate driver to adjust only the gate resistance in the Miller Plateau by measuring the gate-to-source voltage [43][44][45][46].…”

Section: Dynamic Operation In Real Rail Track Conditionsmentioning

confidence: 99%

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All-SiC Traction Converter for Light Rail Transportation Systems: Design Methodology and Development of 165 kVA Prototype

et al. 2022

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The design and development of a high-performance 165 kVA, 750 V DC all-silicon carbide (SiC) traction converter for new generation light rail transportation systems (LRTSs) are described. In the design of the traction motor drive, the efficiency of the overall system is maximized and the line current harmonic content of the traction motor is minimized. A complete mathematical model of the physical system is derived to carry out real-time simulations and proper control of the LRTS on a real rail track. The electrical and thermal performances of traction-type SiC power MOSFET modules are compared with those of alternative hybrid and Si-IGBT modules for various switching frequencies. The implementation of the developed system is also described. The performance of the resulting system is verified experimentally on a full-scale physical simulator as well as for various track conditions. Very promising results for the next generation railway traction motor drives have been obtained in terms of performance criteria, such as very high efficiency, low harmonic distortion of the motor line current, low cooling requirement, relatively high switching frequency, and hence, superior controller performance. The effects of the SiC power MOSFET operation on the insulation of the available traction motors are also examined experimentally. This paper is accompanied by a video demonstrating the experimental work.

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Section: Discussionmentioning

confidence: 99%

Section: Dynamic Operation In Real Rail Track Conditionsmentioning

confidence: 99%

All-SiC Traction Converter for Light Rail Transportation Systems: Design Methodology and Development of 165 kVA Prototype

et al. 2022

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“…This selection is made according to switching frequency range, the motor's voltage and current. While MOSFETs are used in high current and low voltage practices, IGBT is preferred in high voltage high current applications [21]. Since BLDC motors used in drones will operate at low voltage, MOSFET selection would be more ideal.…”

Section: B Sensorless Control Methodsmentioning

confidence: 99%

Sensorless Control of Outer Rotor Brushless DC Motor With Back-EMF Observer for Drone

Çabuk

2021

Balkan Journal of Electrical and Computer Engineering

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The outer rotor brushless direct current motor, which is a highly speed, efficiently, silence and long-life motor, is the most popular motor for drones. Control methods of this type of motor is the most important parameter to be considered. The hall effect sensors, that used in BLDC motor, are not trustable in control applications therefore the back-EMF observer method can be operated for sensorless control. Reducing the production cost of the drive for drone applications is one of the primary goals of manufacturers. Manufacturing cost reduction is often achieved by eliminating driver auxiliary components such as sensors. The use of these sensors, which are important for the detection of rotor position, has been eliminated with sensorless driver designs. This study presents a sensorless outer rotor BLDC motor driver algorithm with back-EMF observer with motor input terminal current and DC bus voltage independent of rotor speed. The sensorless driver model proposed in the study was implemented for a 330W drone motor with a rated voltage of 14.8V. The proposed sensorless control algorithm is proved by MATLAB/SIMULINK results

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“…However, software configuration is utilized to optimize the turn-OFF process of each SiC MOSFET. Academia has dedicated much effort to the exploration of closed-loop control for AGD including Rogowski coil [120], the voltage on the stray inductance [73], and current transformer [121], [122].…”

Section: Conclusion and Insight Of Current Sharing Strategiesmentioning

confidence: 99%

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Zhao

Wang

et al. 2023

IEEE Trans. Power Electron.

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Power semiconductor devices are often connected in parallel to increase the current rating of the power conversion systems. However, due to mismatched circuit parameters or semiconductor fabrication discrepancies, the current of paralleled power semiconductor devices can be unbalanced, which potentially leads to accelerated aging and long-term reliability issues. The fast-switching speed of silicon carbide (SiC) devices aggravates this problem due to its higher sensitivity to parasitic parameters. Numerous efforts have been dedicated to analyzing and addressing the current imbalance issue of paralleling SiC devices. This article comprehensively summarizes and presents state-of-the-art research regarding the current imbalance in paralleled SiC devices. Degree of imbalance is proposed to comprehensively quantify the current mismatch. Starting with mechanism analysis, different types of current imbalance are categorized. Various device parameters and the package layout that impact the current distribution are investigated. The existing solutions including passive methods and active methods are concluded and categorized. This work also incorporates insight into the future development needs of high-power multichip SiC module packaging and driving technologies.

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Application of An Active Gate Driver for Paralleling Operation of Si IGBT and SiC MOSFET

Cited by 6 publications

References 13 publications

All-SiC Traction Converter for Light Rail Transportation Systems: Design Methodology and Development of 165 kVA Prototype

All-SiC Traction Converter for Light Rail Transportation Systems: Design Methodology and Development of 165 kVA Prototype

Sensorless Control of Outer Rotor Brushless DC Motor With Back-EMF Observer for Drone

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

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