2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) 2013
DOI: 10.1109/pvsc.2013.6744443
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Application of an analytical model based on transistor concepts for the characterization of potential-induced degradation in crystalline silicon photovoltaics

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Cited by 2 publications
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“…In [8], the authors proposed an analytical transient model describing the PID effect for standard crystalline silicon PV cells. The PID mechanism is compared with transistor aging concepts, since both PV cells and metal–oxide–semiconductor field‐effect transistors (MOSFETs) have an insulating film within the leakage current path.…”
Section: Pv Panel Technologies and Their Peculiaritiesmentioning
confidence: 99%
“…In [8], the authors proposed an analytical transient model describing the PID effect for standard crystalline silicon PV cells. The PID mechanism is compared with transistor aging concepts, since both PV cells and metal–oxide–semiconductor field‐effect transistors (MOSFETs) have an insulating film within the leakage current path.…”
Section: Pv Panel Technologies and Their Peculiaritiesmentioning
confidence: 99%