Application of Back-side Alignment of Thick Layers for the Manufacturing of Advanced Power Devices

We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch integration is very simple, adding only one mask step to the underlying high-performance BiCMOS process. Moreover, it offers low cost, wafer level packaging. The insertion loss of the switch is less than 0.5dB up to 140GHz, and isolation is better than 15dB in the frequency range of 90 to 140GHz. The switch-on time is measured as 10s. No performance degradation was observed after 5 billion cold switching cycles demonstrating the high reliability of the switch. An on-chip charge-pump (CP) circuit is realized using enhanced PMOS transistor to excite the switch with an output voltage of up to 50V and a rise time of 2s. ©2010 IEEE

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BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

Kaynak

Wietstruck

Scholz

et al. 2010

2010 International Electron Devices Meeting

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Application of Back-side Alignment of Thick Layers for the Manufacturing of Advanced Power Devices

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BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

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