Application of critical shape analyses to two-dimensional patterns

Pochkowski, Mike; Mack, Chris A.; Kasprowicz, Bryan S.

doi:10.1117/12.436740

Cited by 2 publications

(3 citation statements)

References 4 publications

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“…Pochkowski [7] already investigates the image transfer from reticle to wafer for the case of contacts. This could now be extended to aribitrary features.…”

Section: Discussionmentioning

confidence: 99%

“…Up to now, the interest has been low to reach an exact copy of the design on the mask, as it is generally believed that, for example, rounded corners on the mask do not affect the printing performance on wafer anyway, because these higher order diffraction orders are not transmitted by the lens of the exposure system. It is generally accepted that for contact holes it is the area that determines the printing performance [7]. If part of the area of a contact is lost because of rounding of the 4 corners, this can be compensated by increasing the programmed size, even in the situation where the rounding of the four corners interacts and causes a decreased diameter of the obtained circular contact.…”

Section: Quantification Of Pattern Fidelitymentioning

confidence: 99%

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Reticle quality needs for advanced 193-nm lithography

et al. 2001

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An overview will be given of the increasing reticle quality needs, based on the 193nm lithography program ongoing at IMEC, with special focus on the 100nm node. When benchmarked against high NA 248nm, 193nm offers an advantage for the 130nm node, as less aggressive resolution enhancements are required. For decreasing k1-factor, there is also a need to cope with an increasing mask error factor. The CD uniformity needs to be tightened. Likely, it is required to keep proximity effects and linearity issues on reticles under control. Extending from linewidth control to pattern fidelity, new metrology concepts are being suggested, which will allow to come-up with a quantitative result. Especially for the implementation of aggressive OPC there is a need to consider the mask quality in many more aspects then just those typically taken into account so far. This will allow an assessment of the printing performance of real reticles, taking limitations of the achieved pattern fidelity caused by the mask making process into account.

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“…Pochkowski [7] already investigates the image transfer from reticle to wafer for the case of contacts. This could now be extended to aribitrary features.…”

Section: Discussionmentioning

confidence: 99%

Section: Quantification Of Pattern Fidelitymentioning

confidence: 99%

Reticle quality needs for advanced 193-nm lithography

et al. 2001

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show abstract

“…The photos taken from contact holes (CH) on a mask revealed that already at l7Onm (lx, ALTA 3500 write tool) contact holes have rounded corners. And of course, this corner rounding is write tool and process dependent [1]. The photos indicate small non-symmetric deviations from corner to corner of the contact hole.…”

Section: Introductionmentioning

confidence: 98%

<title>Contact hole litho correlation with shape analysis</title>

Janssen

Elbattay

Kohler

2003

19th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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For the near future generations of lithography we investigate the reticle measurements of contact holes with respect to their lithographic performance. The difficulty with the shrinking size of contact holes is that their X and/or Y measurement on reticle does not correlate with the lithographic results. The shape of the contact hole will have a large impact. This paper considers the several types of reticle SEM measurement on isolated contact holes, the simulations on asymmetric contact holes, reticle photo analysis of contact hole shape, and lithographic result of 1 15-nm contact holes.A set of contact holes has been measured with a CD SEM in several ways as x-size, y-size, area, diameter in various angles. Only area measurement will suffice to judge contact hole size and shape. A second step simulates the behaviour of asymmetric contact hole shapes. For attenuated phase shifted contact holes of 1 3Onm (lx) and smaller, shape asymmetry can lead to small CD deviations. The third step correlates lithographic performance with the reticle measurements. Contact hole area or effective circular diameter correlates with wafer results. A better correlation results from reticle CD uniformity profile. The attenuated (6%) PSM that we used, has a large variety of sizes and pitches in contact holes. The reticle was exposed using the ASML Step and Scan PAS5SOO/1100 system. The reticle was measured with a KLA SEM.

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Application of critical shape analyses to two-dimensional patterns

Cited by 2 publications

References 4 publications

Reticle quality needs for advanced 193-nm lithography

Reticle quality needs for advanced 193-nm lithography

<title>Contact hole litho correlation with shape analysis</title>

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