1991
DOI: 10.1007/bf01124824
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Application of diamond films from CO-H2 plasma to tool blade coating

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Cited by 36 publications
(2 citation statements)
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“…Chemical and electrochemical etching of cobalt are widely used to reduce the amount of cobalt at the diamond-insert interface (e.g. Suzuki et al 1986;Saito et al 1991). The reported etching procedures include the use of H 2 O 2 : H 2 SO 4 = 9 : 1 (Park et al 1993), HNO 3 (Nesladek et al 1993) and other solvents.…”
Section: The Diamond-carbide Interfacementioning
confidence: 99%
“…Chemical and electrochemical etching of cobalt are widely used to reduce the amount of cobalt at the diamond-insert interface (e.g. Suzuki et al 1986;Saito et al 1991). The reported etching procedures include the use of H 2 O 2 : H 2 SO 4 = 9 : 1 (Park et al 1993), HNO 3 (Nesladek et al 1993) and other solvents.…”
Section: The Diamond-carbide Interfacementioning
confidence: 99%
“…Therefore, substrate pretreatments prior to diamond deposition is necessary to eliminate or reduce that negative effect of cobalt. Chemical etching [10][11][12] , one of the pretreatments, is commonly used in industry due to its simpleness and inexpensiveness. For example, the two-step pretreatment combining two kinds of solutions (KOH:K 3 [Fe(CN) 6 ]:H 2 O and H 2 SO 4 :H 2 O 2 ) can remarkably enhance the adhesion, which has been confirmed by R. Haubner et al [13] and Jinqi Miao et al [14] Nevertheless, the specific information of the pretreatment procedure is not sufficient to establish reasonable processes.…”
Section: Introductionmentioning
confidence: 99%