Application of EPR Spectroscopy to Oxidative Removal of Organic Materials

Cook, J. M.; Benson, Brent W.

doi:10.1149/1.2119613

Cited by 94 publications

(54 citation statements)

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“…The etching selectivity between Si and SiO 2 has been reported to be from 20 to 50 in plasma reactors. 18 Our measurements with energetic Ar ϩ ions and chlorine atoms agreed well with what has been reported. Higher selectivities for polysilicon with respect to silicon dioxide or photoresist are desired for patterning finer features.…”

Section: F Etching Selectivity Between Si and Sio 2 With Ar ¿ And CLsupporting

confidence: 90%

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Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine

Chang

Sawin

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The plasma-surface kinetics of silicon dioxide and photoresist etching in chlorine were measured by beam scattering in which the Ar+, Cl, and Cl2 beams were independently controlled at fluxes comparable to a high-density plasma etching process. The etching was characterized as a function of Ar+ ion energy, ion flux, chlorine-to-ion flux ratio, and the ion impingement angle. Molecular chlorine did not enhance the etching of silicon dioxide, but atomic chlorine enhanced the etching of oxide by a factor of 4 at flux ratios around 100. The ion energy dependence for oxide was a linear function of (Eion1/2−Eth1/2), where the threshold energy Eth was found to be approximately 40 eV. The oxide angular dependence showed a maximum etching yield at ∼60° off-normal ion incident angle, indicating that physical sputtering is the rate limiting mechanism. Angular resolved x-ray photoelectron spectroscopy analysis suggests that ion bombardment sputters oxygen and allows atomic chlorine to bond to silicon. The etching of chlorinated silicon is assumed to be enhanced by subsequent ion bombardment in a manner similar to ion enhanced polysilicon etching with chlorine. The angular dependence of photoresist etching exhibited a maximum at ∼60° off-normal ion incident angle, indicating that sputtering is the important etching mechanism.

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Section: F Etching Selectivity Between Si and Sio 2 With Ar ¿ And CLsupporting

confidence: 90%

“…Addition of 1% oxygen to a chlorine plasma is known to reduce the etching rate of silicon dioxide significantly, and increase the selectivity of polysilicon over silicon dioxide to 70. 18 The addition of an O 2 beam was found to have a similar but smaller effect.…”

Section: F Etching Selectivity Between Si and Sio 2 With Ar ¿ And CLmentioning

confidence: 91%

Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine

Chang

Sawin

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The etching process of polymers is linearly dependent on the concentration of the atomic-oxygen free radicals [15] or on the number of oxygen atoms consumed during the etching process [16]. Since the PVA is an unsaturated polymer, the etching process is represented as addition to unsaturated moieties [17].…”

Section: Reactive Ion Etching (Rie) Effects On the Pvamentioning

confidence: 99%

Fabrication of a dual-tier thin film micropolarization array

Gruev¹,

Ortu²,

Lazarus³

et al. 2007

Opt. Express

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A thin film polarization filter has been patterned and etched using reactive ion etching (RIE) in order to create 8 by 8 microns square periodic structures. The micropolarization filters retain the original extinction ratios of the unpatterned thin film. The measured extinction ratios on the micropolarization filters are ~1000 in the blue and green visible spectrum and ~100 in the red spectrum. Various gas combinations for RIE have been explored in order to determine the right concentration mix of CF 4 and O 2 that gives optimum etching rate, in terms of speed and under-etching. Theoretical explanation for the optimum etching rate has also been presented. In addition, anisotropic etching with 1μm under cutting of a 10μm thick film has been achieved. Experimental results for the patterned structures under polarized light are presented. The array of micropolarizers will be deposited on top of a custom made CMOS imaging sensor in order to compute the first three Stokes parameters in real time. Abstract: A thin film polarization filter has been patterned and etched using reactive ion etching (RIE) in order to create 8 by 8 microns square periodic structures. The micro polarization filters retain the original extinction ratios of the unpatterned thin film. The measured extinction ratios on the micro polarization filters are ~1000 in the blue and green visible spectrum and ~100 in the red spectrum. Various gas combinations for RIE have been explored in order to determine the right concentration mix of CF 4 and O 2 that gives optimum etching rate, in terms of speed and underetching. Theoretical explanation for the optimum etching rate has also been presented. In addition, anisotropic etching with 1μm under cutting of a 10µm thick film has been achieved. Experimental results for the patterned structures under polarized light are presented. The array of micro polarizers will be deposited on top of a custom made CMOS imaging sensor in order to compute the first three Stokes parameters in real time.

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“…The etching process of polymers is linearly dependent on the concentration of the atomic-oxygen free radicals [16] or on the number of oxygen atoms consumed during the etching process [17]. Since the PVA is an unsaturated polymer, the etching process is represented as addition to unsaturated moieties [18].…”

Section: Reactive Ion Etching Effects On the Pvamentioning

confidence: 99%

Realtime extraction of polarimetric information at the focal plane

Gruev¹,

Wu²,

Spiegel³

et al. 2006

Polarization: Measurement, Analysis, and Remote Sensing VII

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Traditional imaging systems focus on converting light's intensity and color property into suitable electronic signals. An important property of light, polarization is ignored with these traditional imaging systems. Polarization vision contains information about the imaged environment, such as surface shapes, curvature and material properties. Real time extraction of polarization properties would further allow synergy with traditional adaptive spatiotemporal image processing techniques for synthetic imaging. Therefore, we have developed an image sensor with real-time polarimetric extraction capability at the focal plane using low power analog circuits. This novel imaging system is the first of its kind to compute Stokes parameters at the focal plane in real-time. In order to fully describe the polarization state of light in nature, three linear polarized projections or two linear polarized projections in combination with the total intensity are required. We have fabricated a two layer micro polarizer array with total thickness of around 20µm. The micro polarizer array is mounted on top of the imaging sensor. The image sensor is composed of a 256 by 256 photo pixel array, noise suppression circuitry and analog processing circuitry for polarimetric computation. The image sensor was fabricated in 0.18µ process with 10µm pixel pitch and 75% fill factor. Block-parallel pixel read out is employed in order to compute Stokes parameters on a neighborhood of 2 by 2 pixels. The Stokes parameters are presented together with the noise suppressed intensity image. Experimental data from the polarimetric imaging system is also presented.

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Application of EPR Spectroscopy to Oxidative Removal of Organic Materials

Cited by 94 publications

References 0 publications

Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine

Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine

Fabrication of a dual-tier thin film micropolarization array

Realtime extraction of polarimetric information at the focal plane

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