Application of Fast Laser Deprocessing Techniques on large cross-sectional view area sample with FIB-SEM dual beam system

Zhao, Yongfeng; Wang, Q. J.; Tan, Puay Siew; Yap, H. H.; Liu, Binghai; Feng, Huanhuan; Tan, H.; He, Rujie; Huang, Yuanyuan; Wang, D. D.; Zhu, Liang; Chen, C. Q.; Rivai, Francis; Lam, Jeffrey; Mai, Zhihong

doi:10.1016/j.microrel.2016.07.060

Cited by 4 publications

(1 citation statement)

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“…In this paper, we will introduce an innovative LDT assisted memory bit-counting method that is applicable to both SRAM and NVM devices. LDT is fast, simple, and has been used to secure an uneven sample surface and remove unwanted layers [1,8]. LDT employs pulse laser with high peak power to irradiate the sample and physically remove material from the surface, which is economical, efficient, and user-friendly.…”

Section: Astesj Issn: 2415-6698mentioning

confidence: 99%

Laser Deprocessing Technique and its Application to Physical Failure Analysis

Pan¹,

Thong²,

Tan³

et al. 2020

Adv. sci. technol. eng. syst. j.

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This paper is an extension of work originally presented in IPFA 2019. In the original work, a new memory bit-counting method in physical failure analysis (PFA) using laser deprocessing technique (LDT) is introduced. In the present paper, LDT will be further exploited and the methodology applied to PFA will be fully discussed. Compared to the conventional methods that involve high-cost equipment such as focused ion beam (FIB) and reactive ion etcher (RIE), the novel LDT method using a laser system instead lowers the cost by more than 5 times and shortens the failure analysis (FA) cycle time by up to 45%. The new improved methodology can significantly increase PFA throughput especially in semiconductor foundries, and facilitate more applications in other types of FA labs.

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Section: Astesj Issn: 2415-6698mentioning

confidence: 99%