Application of Ge Nanowire for Two-Input Bistable Nanoelectromechanical Switch

Abstract

Recently, several research groups presented bistable two-terminal nanoelectromechanical switches based on individual single-clamped active element. All presented devices had one input electrode. Similar devices having two or more input electrodes have not been yet investigated. In this work we present the two-input bistable controlled nanoelectromechanical switch based on an individual single-clamped Ge nanowire. The switch is realised using in-situ SEM technique and operating due to balancing of electrostatic, adhesion and elastic forces. The operation conditions of the device are investigated and presented. The advantages and drawbacks of the device are discussed.

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

“…The NEM switch components can be produced from a wide range of nanostructures (e.g., thin films [ 5 – 7 ], nanobundles [ 8 ], nanowires [ 9 – 14 ], nanotubes [ 15 – 16 ]) fabricated from different materials (e.g., metals [ 17 – 19 ], semiconductors [ 9 – 10 20 – 23 ], carbon allotropes, including graphene [ 24 – 31 ] and carbon nanotubes [ 12 , 15 – 16 32 – 37 ]). With a proper choice of material and architecture, NEM switches can withstand relatively high radiation levels and extreme temperatures [ 19 , 25 , 38 – 39 ], highlighting their potential for applications in harsh environments.…”

“…Recently, switching of a moving element (Ge nanowire) between two drain electrodes located symmetrically ( Fig. 1 ,f drains 1 and 2) [ 14 ] and asymmetrically ( Fig. 1 ,f drains 1 and 3) [ 11 ] relative to the switching element in 2T configuration was demonstrated.…”

“…Square voltage pulses alternately applied to the drain electrodes are represented by the red line (secondary axis). Reprinted with permission from [ 14 ], copyright 2013 Andzane et al…”

“…Both Si and Ge nanowires are used in bottom-up fabricated NEM switches and in in situ testing of devices prototypes [ 9 – 11 13 – 14 ]. It was found that the presence of a native oxide layer on Si and Ge nanostructures implies some limitation on NEM switch operation at low voltages due to the high contact resistance expressed in low on/off ratio [ 9 ] and non-conductive gap below 2–4 V [ 10 , 13 , 54 ].…”

Vertical, capacitive microelectromechanical switches produced via direct writing of copper wires

“…Recently, Jang et al 8,20 demonstrated a vertical, three-terminal, carbon-nanotube-based electromechanical switch, in which multiwalled carbon nanotubes were catalytically grown and used as active elements. Similarly, free-standing germanium nanowires 21,22 and Mo 6 S 3 I 6 nanowires 23 were also used as switching elements. Although such microswitches provide many advantages compared with conventional semiconductor switches and are being studied in detail [24][25][26][27] , most of those fabrications are incompatible with typical microfabrication processes.…”