Application of high uniaxial strain methods for semiconductor parameter determination

Kolomoets, V. V.; Ermakov, V. N.; Panasyuk, L. M.; Fedosov, S. A.; Orasgulyev, B.; Nazarchuk, P.F.

doi:10.1016/j.physb.2013.02.017

Cited by 5 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The curves shown in Fig. 3 are typical for n-Ge and n-Si at Т = 77.4 K. It should be noted that the mentioned characteristic property (decline of the dependence ρ X /ρ 0 = f (X) with increasing Х) of heavily doped crystals occurs also in other experimental studies (see, for example, [16,17]). …”

Section: Resultssupporting

confidence: 64%

Features of tensoresistance in single crystals of germanium and silicon with different dopants

Баранский¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

Section: Resultssupporting

confidence: 64%

Features of tensoresistance in single crystals of germanium and silicon with different dopants

Баранский¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

“…Carefully controlled uniaxial-compression has long being used to study semiconductors and to reveal new information regarding their properties [6,7]. Many high-pressure experiments have been designed to highlight the effects of uniaxial strain along different crystallographic directions.…”

Section: Introductionmentioning

confidence: 99%

Influence of compressive uniaxial strain on the piezoelectric response of wurtzite crystals

Benbedra

Meskine

Boukortt

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We present a computational study of the crystal structure and electric polarization of strained wurtzite III-V nitrides and II-VI oxides, performed in the context of density functional theory and the Berry phase method. The main goal is to investigate the degree to which the lattice parameters, piezoelectric polarization, and piezoelectric constant can be affected by compressive uniaxial strain along the hexagonal c-axis. We show that imposing such strain enhances the piezoelectric response, with both polarization and piezoelectric coefficient increasing from their equilibrium values. The internal parameter of the wurtzite structure also increases with uniaxial strain and eventually becomes equal to 0.5, resulting in a phase transition into the layered hexagonal structure. Furthermore, we discuss the physical origin behind the enhanced piezoelectricity, showing that the enhancement is caused by a strong increase in the response of the internal parameter to strain.

show abstract

“…The studies under conditions of the strong uniaxial deformation are of particular interest, since these experiments allow changing (relatively easy and in a wide range) the essential characteristics of semiconductor crystals [2][3][4][5]. For example, the many-valley n-Ge and n-Si crystals can be converted into one-and two-valley states by application of uniaxial compression, which can provide a real opportunity to measure such characteristics as the deformation potentials, the anisotropy parameters, etc [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

Гайдар¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract.Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of ∼ 10 15 cm -3 was found, whereas in silicon with increasing the doping level the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained.

show abstract

Application of high uniaxial strain methods for semiconductor parameter determination

Cited by 5 publications

References 5 publications

Features of tensoresistance in single crystals of germanium and silicon with different dopants

Features of tensoresistance in single crystals of germanium and silicon with different dopants

Influence of compressive uniaxial strain on the piezoelectric response of wurtzite crystals

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

Contact Info

Product

Resources

About