1996 Symposium on VLSI Technology. Digest of Technical Papers
DOI: 10.1109/vlsit.1996.507813
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Application of HSQ (hydrogen silsesquioxane) based SOG to pre-metal dielectric planarization in STC (stacked capacitor) DRAM

H.J. Lee
1
,
Jai Hyun Choi
2
,
B.J. Hwang
3
et al.
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