Application of molecular interaction volume model on removing impurity aluminum from metallurgical grade silicon by vacuum volatilization

Liu, Kai; Wu, Jijun; Wei, Kuixian; Ma, Wenhui; Xie, Ke; Li, Shaoyuan; Yang, Bin; Dai, Yongnian

doi:10.1016/j.vacuum.2014.12.021

Cited by 23 publications

(5 citation statements)

References 15 publications

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“…It is based on a low-cost metallurgical purication technique, using MG-Si as the starting material and preventing silicon from becoming involved in a chemical reaction. The purication of MG-Si by metallurgical methods, such as solvent rening, 2,3 slag rening, 4 directional solidication, 5 and so on, 6,7 has been investigated.…”

Section: Introductionmentioning

confidence: 99%

Purification of metallurgical-grade silicon combining Sn–Si solvent refining with gas pressure filtration

Guo

Wang

et al. 2020

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Purification of metallurgical-grade silicon combining Sn–Si solvent refining with gas pressure filtration

Guo

Wang

et al. 2020

RSC Adv.

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“…The MIVM was derived from the statistical thermodynamics, which is of better stability and reliability to predict the activity coefficients of binary, ternary, and even multi-component alloy solutions at the whole composition range. In our previous work, the binary Si-Al and Si-Fe solutions were selected as examples for verifying effectiveness of MIVM at the whole composition range [25,26]. Then, the binary Si-B and Si-P solutions could also be worked out.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamic properties of iron, aluminum, boron and phosphorus in dilute silicon solutions by molecular interaction volume model

Liu

Yang

et al. 2020

J min metall B Metall

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The thermodynamic properties of impurity components in silicon solutions play an important role in the chemical removal process to the metallurgical route. In this paper, the component activity coefficients and interaction parameters of dilute silicon solutions were estimated by the molecular interaction volume model (MIVM). The activity coefficients ( ) of component i in dilute binary Si-i and ternary Si-i-j solutions at 1687-1873 K were firstly calculated. The concentration dependences of the interaction parameter and activity coefficient were also obtained. The self-interaction parameters ( ) for Si-i system were obtained as , , and . At the same time, the interaction parameters among components B, Al, and Fe in dilute ternary Sii-j solutions were also derived as , and . Most important of all, the temperature dependences of the interaction parameters and activity coefficients in dilute Si-i and Si-i-j solutions with a certain i or j concentration were deduced. The results show that the predicted self-interaction parameters of B, Al, Fe, and P in binary silicon solutions reasonably agree with the experimental data. This further shows that MIVM is of reliability and can be expanded to a multi-component dilute silicon solution.

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“…MIVM [2] predicts thermodynamic activities from first-principles, it requires the knowledge of a few physical properties of the alloy components [2][3][4][5][6][7][8]. It also requires pair potential parameters and which are derived from the infinite dilute activity coefficients ∞ and ∞ of each of the binary sub-systems [2,13,15].…”

Section: Molecular Interaction Volume Model (Mivm)mentioning

confidence: 99%

“…Molecular interaction volume model (MIVM) [2] is a theoretical tool that has been applied by many researchers [3][4][5][6][7][8] to successfully predict thermodynamic activities of components of liquid alloys. MIVM requires the knowledge of a few physical parameters for each alloy component, and infinite dilute activity coefficient pairs ( ∞ and ∞ ) for every binary sub-system.…”

Section: Introductionmentioning

confidence: 99%

Computation of infinite dilute activity coefficients for Ga-X (X= In, Tl) and thermodynamic activities of all components in liquid Ga-In-Tl alloys

Oshakuade,

Awe

2021

Preprint

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The thermodynamic activities of all components in Ga-In-Tl system have been predicted at 1073, 1173 and 1273 K, using Molecular interaction volume model (MIVM). The infinite dilute activity coefficients for Ga-In and Ga-Tl binary subsystems, which were needed for the determination of thermodynamic activities of all components in Ga-In-Tl, have been predicted by using a method that is based on Complex formation model for liquid alloys. The computed thermodynamic activities of Ga in Ga-In-Tl were observed to satisfactorily agree with the available experimental data when the newly computed coefficients were applied in MIVM. The satisfactory prediction of the activity of Ga led to the prediction of the activities of the remaining two components (In and Tl). Iso-activities of all components (Ga, In and Tl) were plotted, and they reveal the dependence of the nature of chemical short range order in Ga-In-Tl system on composition.

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Application of molecular interaction volume model on removing impurity aluminum from metallurgical grade silicon by vacuum volatilization

Cited by 23 publications

References 15 publications

Purification of metallurgical-grade silicon combining Sn–Si solvent refining with gas pressure filtration

Purification of metallurgical-grade silicon combining Sn–Si solvent refining with gas pressure filtration

Thermodynamic properties of iron, aluminum, boron and phosphorus in dilute silicon solutions by molecular interaction volume model

Computation of infinite dilute activity coefficients for Ga-X (X= In, Tl) and thermodynamic activities of all components in liquid Ga-In-Tl alloys

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