Application of organic field-effect transistors in memory

Zhu, Zhiheng; Guo, Yunlong; Liu, Yunqi

doi:10.1039/d0qm00330a

Cited by 53 publications

(50 citation statements)

References 99 publications

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“…[1][2][3][4] FET memory devices with polymer electrets outperform their inorganic counterparts in their affordability, being light-weight, mechanical flexibility, diversified structural design, etc. [5][6][7][8] Especially, photonic FET memory, in addition to the aforementioned advantages, currently presents a high current contrast (10 5 ), fast programing time (<3 s), and prolonged retention time (>10 4 s), etc. [9][10][11][12] Many design strategies have been proposed concerning the plethora of the charge trapping materials including an organic-inorganic hybrid floating gate, [13,14] a conjugated/insulating polymer blends based floating gate, [15,16] rod-coil molecules with highly order layer structure, [17,18] donor-acceptor copolymers, [19][20][21] conjugated block copolymers (BCPs), [22] or charge-transfer supramolecules [23] as polymer electrets.…”

Section: Multiband Photoresponding Field-effect Transistor Memory Using Conjugated Block Copolymers With Pendent Isoindigo Coils As a Polmentioning

confidence: 99%

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Lin

Yang

et al. 2021

Adv Elect Materials

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In this study, the authors report a series of conjugated block copolymers, PF‐b‐Piso comprising poly[2,7‐(9,9‐dihexylfluorene)] (PF), and poly(pendent isoindigo) (Piso) for polymer electret in the photonic field‐effect transistor (FET) memory device. The optical properties, surface morphology, and molecular organization of these BCPs are investigated systematically. Accordingly, Piso with absorption in the Ultraviolet C range (UVC, 200–280 nm) possibly rendered the device with a multiband photoresponse, and a good memory performance is achieved by optimizing the polymer composition. Therefore, the memory device comprising PF‐b‐Piso could perform a high current contrast of 106 to 405 nm light and 105 to 254 nm light over 104 s. In addition, a current contrast of 104 and 102 is achieved in response to 650 and 530 nm light, and this phenomenon can be attributed to the charge transfer between channel and memory layers. The experimental results indicate that the block copolymer design not only conduces to forming a self‐assembled microphase separation to stabilize the trapped charge in the polymer electret, but also triggers multiband photoresponding of the photonic FET memory.

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Section: Multiband Photoresponding Field-effect Transistor Memory Using Conjugated Block Copolymers With Pendent Isoindigo Coils As a Polmentioning

confidence: 99%

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Lin

Yang

et al. 2021

Adv Elect Materials

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“…A mismatch between solution-processed, lightsensitive materials and vacuum-processed materials can cause low fabrication efficiency and reproducibility. Thereby, bottom gate OFET configuration is often preferred in order to prevent OSC from damage by high temperature of the deposition of the electrode [42]. For instance, flexible substrates such as polyethylene terephthalate (PET) cannot survive high temperatures required for indium tin oxide (ITO) electrode deposition.…”

Section: Preprints (Wwwpreprintsorg) | Not Peer-reviewed | Posted: 6 December 2021mentioning

confidence: 99%

“…Trapped charges contribute to the device in the writing and erasing process. All these processes can be interpreted by the memory window which is the Vth shifting range in the writing and erasing process and has huge importance in assessing the memory device efficiency [42,149]. P(VDF-TrFE) was used as a ferroelectric material in a TGBC, solution-processed photomemory study [153].…”

Section: Photoactivated Memory Devices and Their Applicationsmentioning

confidence: 99%

A Review on Solution-Processed Organic Phototransistors and Their Recent Developments

Tavasli¹,

Gürünlü²,

Güntürkün³

et al. 2021

Preprint

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Today, more disciplines are intercepting each other, giving rise to “cross-disciplinary” research. Technological advancements in material science and device structure and production have paved the way towards development of new classes of multi-purpose sensory devices. Organic phototransistors (OPTs) are photo-activated sensors based on organic field-effect transistors that convert incident light signals into electrical signals. The organic semiconductor (OSC) layer and three-electrode structure of an OPT offer great advantages for light detection compared to conventional photodetectors and photodiodes, due to their signal amplification and noise reduction characteristics. Solution processing of the active layer enables mass production of OPT devices at significantly reduced cost. The chemical structure of OSCs can be modified accordingly to fulfil detection at various wavelengths for different purposes. Organic phototransistors have attracted substantial interest in a variety of fields, namely biomedical, medical diagnostics, healthcare, energy, security, and environmental monitoring. Lightweight and mechanically flexible and wearable OPTs are suitable alternatives not only at clinical levels but also for point-of-care and home-assisted usage. In this review, we aim to explain different types, working mechanism and figures of merit of organic phototransistors and highlight the recent advances from the literature on development and implementation of OPTs for a broad range of research and real-life applications.

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“…For typical NVM devices, the programming/erasing properties depend on the applied voltage to the control gate electrode (V program /V erase ) that leads to validate the memory window with the corresponding variation in the current level of a device as ‘on’ state and ‘off’ state, describing programmable and erasable constitutes of memories [ 7 , 8 , 9 ]. In this regard, floating gate NVM devices based on various semiconductors, such as two-dimensional (2D) materials (molybdenum disulfide (MoS 2 ) and tungsten disulfide (WS 2 )), [ 3 , 8 , 10 , 11 , 12 , 13 ] oxide materials (indium gallium zinc oxide (IGZO) and zinc oxide (ZnO)) [ 9 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ] and organic materials (pentacene, poly(3-hexylthiophene) (P3HT), and dinaphthothienothiophene (DNTT)) [ 21 , 22 , 23 , 24 , 25 , 26 ] have recently been studied, exhibiting high-performance memory operations with greater endurance and retention properties but are still limited at obtaining reliable reproducibility, larger memory window with on-off ratio, low-temperature processing, and easy fabrication methods.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

et al. 2021

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Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.

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Application of organic field-effect transistors in memory

Abstract:
Organic semiconductors for electronic devices have attracted much attention in scientific research and industrial applications. In the past few decades, functional organic field-effect transistors (OFETs) have developed rapidly, especially OFETs...

Cited by 53 publications

References 99 publications

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

A Review on Solution-Processed Organic Phototransistors and Their Recent Developments

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

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Application of organic field-effect transistors in memory

Abstract: Organic semiconductors for electronic devices have attracted much attention in scientific research and industrial applications. In the past few decades, functional organic field-effect transistors (OFETs) have developed rapidly, especially OFETs...

Cited by 53 publications

References 99 publications

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

A Review on Solution-Processed Organic Phototransistors and Their Recent Developments

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Contact Info

Product

Resources

About

Abstract:
Organic semiconductors for electronic devices have attracted much attention in scientific research and industrial applications. In the past few decades, functional organic field-effect transistors (OFETs) have developed rapidly, especially OFETs...