High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Naqi, Muhammad; Kwon, Nayoung; Jung, Soyoung; Pujar, Pavan; Cho, Hae Won; Cho, Yong In; Cho, Hyung Koun; Lim, Byungkwon; Kim, Sunkook

doi:10.3390/nano11051101

Cited by 13 publications

(9 citation statements)

References 52 publications

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“…The FG-type IGZO TFT for memory generally utilized metal nanoparticles as a FG. , The electronic synaptic transistor that uses IGZO and metal nanoparticles was proposed by Kim et al This study showed high-performance synaptic functions in an MNIST simulation. Unlike conventional FG-type TFT, this structure was impressive in that the metal nanoparticles were inserted between the dielectric and IGZO.…”

Section: Igzo-based Electronic- And/or Photonic-synaptic Devicesmentioning

confidence: 99%

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Jang

Park

Kang

et al. 2022

ACS Appl. Electron. Mater.

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Brain-inspired neuromorphic computing emulates the biological functions of the human brain to achieve highly intensive data processing with low power consumption. In particular, spiking neural networks (SNNs) that consist of artificial synapses can process spatiotemporal information while enabling energy-efficient neuromorphic computations. Artificial synapses are a key element of sophisticated neuromorphic hardware, so a significant amount of research has been conducted to develop various materials and device structures. Of these, we assess amorphous InGaZnO (IGZO)-based synaptic transistors that have exhibited properties suitable for emerging hybrid optoelectronic neuromorphic systems. Here, we describe the fundamental principles of neuromorphic computations, neuron circuits, and synaptic devices according to recent studies. IGZO-based transistors are discussed, from their material properties to various device physics for electronic- and/or photonic-neuromorphic systems with extraordinary biological emulations.

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Section: Igzo-based Electronic- And/or Photonic-synaptic Devicesmentioning

confidence: 99%

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Jang

Park

Kang

et al. 2022

ACS Appl. Electron. Mater.

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“…The floating layer is anticipated to be the other important constituent in non-volatile memory devices because it determines the charge storage capacity and endurance/retention operation. For traditional non-volatile memory devices other than polycrystalline Si [1], high-k dielectric materials such as HfO 2 [17][18][19], TaN [20], organic films [21,22], and metallic metal (Au, Pt) nanoparticles or nanoclusters [23][24][25] have also been used as floating layers to store and erase charge. Among them, metallic nanocrystal floating layers have several advantages because of their high trapping states, stable retention, and larger memory windows [26].…”

Section: Future Perspectivesmentioning

confidence: 99%

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Liu¹,

Sun²,

Huang³

et al. 2022

Mater. Futures

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Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big data. In addition, the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance matching. This report proposes a 20 ns programme flash memory with 108 self-rectifying ratios based on a 0.65-nm-thick MoS2-channel transistor. A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling layer. In addition, the large rectification ratio and low ideality factor (n = 1.13) facilitate the application of the MoS2-channel flash memory as a bit-line select transistor. Finally, owing to the ultralow MoS2/h-BN heterojunction capacitance (50 fF), the memory device exhibits superior performance as a high-frequency (up to 1 MHz) sine signal rectifier. These results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.

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“…Metallic nanocrystals (e.g., Au) with a high density of states are favored. [1,2] High-k insulating layer, typically, HfO x , is also used because of its excellent charge-trapping ability, reduced coupling crosstalk and good scalability. [3][4][5] However, with thickness scaling down to 10 nm or lower, large leakage becomes and long-term operability of the optoelectronic FGNVM.…”

Section: Introductionmentioning

confidence: 99%

Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

Lai

Zhou

et al. 2022

Advanced Materials

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inevitable, which reduces the reliability in high-density integration. Furthermore, uncontrollable interface is detrimental to the retention time and operation speed of the memory device. 2D van der Waals (vdW) crystals manifest ultra-thin layered structure, highly anisotropic in-and outof-plane conductivity and superior carrier migration, [6] which are promising to solve the above problems. Over the past decade, 2D vdW atomic crystals, such as graphene, MoS 2 , ReS 2 , etc., are widely used as the composed elements in FGNVM, [7][8][9][10][11] and extended device structures are proposed to improve the performance. [12,13] It has been demonstrated that the FGNVM based on vdW heterostructure could enable atomically sharp interface for ultrafast operation at tens of nanosecond. [14][15][16] Nonetheless, the investigation is still in the initial stage and much research work has to be carried out before the commercialization of the vdW-heterostructure-based nonvolatile memory. In conventional FGNVM, the program/erase operations are accomplished by electrical stimuli. The repetitive voltage drives not only increase the power consumption, but also deteriorate the reliability and stability of the device. [17] Light, as an efficient non-contact signal, has a small energy dissipation when traveling through the free space. Therefore, using light illumination as an auxiliary programming method is beneficial to realize long-distance quantum communication, while effectively minimizing the power consumption, so as to improve the reliability The development of floating-gate nonvolatile memory (FGNVM) is limited by the charge storage, retention and transfer ability of the charge-trapping layer.Here, it is demonstrated that due to the unique alternate inorganic/organic chain structure and superior optical sensitivity, an insulating 2D Ruddlesden-Popper perovskite (2D-RPP) layer can function both as an excellent chargestorage layer and a photosensitive layer. Optoelectronic memory composed of a MoS 2 /hBN/2D-RPP (MBR) van der Waals heterostructure is demonstrated. The MBR device exhibits unique light-controlled charge-storage characteristics, with maximum memory window up to 92 V, high on/off ratio of 10 4 , negligible degeneration over 10 3 s, >1000 program/erase cycles, and write speed of 500 µs. Dependent on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with up to 11 and 22 distinct resistance states, respectively. The optical program power for each bit is as low as 36/10 pJ for PPC/NPC. The results not only reveal the potential of 2D-RPP as a superior charge-storage medium in floating-gate memory, but also provides an effective strategy toward fast, low-power and stable optical multi-bit storage and neuromorphic computing.

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High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Cited by 13 publications

References 52 publications

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor

Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

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High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Cited by 13 publications

References 52 publications

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor

Photoinduced Multi‐Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D‐Perovskite Floating Gate

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Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS₂-channel transistor