Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor

Abstract

Radiation damage was studied by deep-level transient spectroscopy and Hall effect measurements for the neutron-transmutation-doped silicon of initially high-and low-resistivity (phosphorus-contained) materials. In the irradiated materials a total of twelve electron traps was observed. A large reduction of carrier concentration and a small reduction of carrier mobility were found in the initially low-resistivity samples ( c 1 2 R cm), correlated closely with the divacancy responsible for two traps ( E 4 and E8). For the initially highresistivity samples ( > 1000 R cm) results showed large reductions of carrier concentration and mobility; these reductions are closely correlated with electron traps E3, E5 and E10. It appeared that the latter three traps correspond to some energy levels within the fast-neutron-induced defect clusters. However, in the initially low-resistivity samples, t h e formation of these traps appeared to be controlled by initially doped phosphorus atoms. In other words, due to the difference in the annealing temperature of divacancy and defect cluster, the annealing-out temperatures of carrier concentration and mobility were lower for the initially low-resistivity samples in comparison with t h e initially highresistivity samples.

Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory

“…Si-rich samples with x<1. 6 showed significantly small Si-O-Si absorption. IR absorption peaks due to Si-H x bonding group are observed from all samples and the peak position shifts from ~2000 and ~2100 to ~2250 cm -1 with increasing x from 1.0 to 1.9 as shown in Fig.…”

“…In Si-rich samples with x<1. 6, SiH x in a-Si is more pronouced, which suggest that formation of amorphous Si (a-Si) network is promoted instead of Si-O-Si network formation. Actually, we confirmed a-Si TO phonon bands in Raman scattering spectra as shown in Fig.…”

“…In this work, we prepare SiO 2 /SiO x /SiO 2 stack structure on Si (100) wafer sequentially by PECVD method, and TPJ annealing was performed to induce precipitation of Si nano crystals. This process steps are compatible with conventional low-temperature poly-Si TFT fabrication [6]. Memory operation of the stack capacitor will be demonstrated.…”

Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage

“…The TPJ method uses a nontransferred direct current (DC) plasma torch with various applications. [23][24][25][26][27][28] In a DC plasma torch of sufficiently high temperature, the thermal energy would concentrate in a small area of an electrode in which a high current flows, accelerating thermal electron emission and increasing the conductivity of the surrounding space. This leads to the concentration of the current in a very small area.…”

Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

“…Because of low defect density of the c-Si films, characteristic variation of TFTs is suppressed to a small value. [12][13][14] If we can fabricate higher FE TFTs by the TPJ crystallization technique, peripheral drivers with CMOS configuration can be integrated.…”