Nanometer size polarized domains were written in a PbZr1−xTixO3 (PZT) thin film using an atomic force microscope (AFM) and the relationship between the polarized domain and the grain of the film was investigated. The polarized domain was formed by applying a pulse voltage to the ferroelectric PZT thin film through a conductive AFM tip. The polarized domain structure was observed by imaging the piezoelectric-induced surface vibration by an AFM with an ac voltage applied between the tip and the bottom electrode of a sample. The polarized domains with a diameter of 50 nm were written within a single grain.

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A 10-nm-thick PbZr0.25Ti0.75O3 thin film is epitaxially grown on a SrRuO3/BaTiO3/ZrO2/Si heterostructure substrate by reactive evaporation. Structural and electrical properties of the film are investigated. It is concluded that the film is ferroelectric and retains a native uniform upward polarization. Artificial downward polarization domains, whose average diameter is 24 nm, can be formed in the film.

An atmospheric line-shaped microplasma source was developed for fine pattern etching, and the dependence of the etching properties on the substrate temperature and the distance between the two outer gas outlets was investigated. There was a sudden increase of the etching rate and a decrease of top width when the substrate temperature was 300°C or more. Auger electron spectroscopy (AES) analysis indicates that oxidation on the line shoulder caused the top width to decrease. By decreasing the distance between the two outer gas outlets from 3 mm to 650 µm, the top width decreased from 441 µm to 234 µm. The gas flow simulation result revealed that there exists a firing limit of SF6 partial pressure from 0.1% to 0.2% in the configuration.

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