Application of press-pack IGBTs in traction refurbishment

Golland, A.; Wakeman, F.

doi:10.1109/apec.2005.1453338

Cited by 10 publications

(2 citation statements)

References 2 publications

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“…Therefore, PPIs have been developed in recent years to replace thyristors and gate turn-off thyristors (GTOs) in traction systems [53], [54], large motor drives [55]- [57], power systems [58]- [60], and pulsed power applications [61]. The reliability record for press-pack devices is much higher than power modules largely due to a better tolerance to thermal cycling: the press pack allows double-sided cooling to lower the thermal impedance [56], [62].…”

Section: Package-related Failure Mechanismsmentioning

confidence: 99%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

1,013

348

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Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

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Section: Package-related Failure Mechanismsmentioning

confidence: 99%

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Yang

Xiang

Bryant

et al. 2010

IEEE Trans. Power Electron.

1,013

348

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show abstract

“…Modules made by these interconnect techniques, which use long and thin conductors to connect to the device's top terminals, are still limited to cooling from the die-attach side of the device chips. To improve package thermal performance, double-side cooled modules have been introduced, such as the metal-postinterconnected parallel-plate structure [13], flip-chip-on-flex [14], dimple array [15], embedded power [16], [17], silicon interposer [18], solder bump [19], metal bump [20]- [23], flip chip [24], power overlay [25], [26], and press pack [27]- [29]. All of these package structures have a common feature, i.e., the device chips are sandwiched between two electrically and thermally conductive substrates, one for die attach and the other for top-terminal interconnection.…”

Section: Introductionmentioning

confidence: 99%

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Ding

Liu

Ngo

et al. 2021

IEEE Trans. Power Electron.

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Planar, double-side cooled power modules are emerging in electric-drive inverters because of their low profile, better heat extraction, and lower package parasitic inductances. However, there is still a concern about their reliability due to the rigid interconnection between the device chips and two substrates of the power module. In this article, a porous interposer made of low-temperature sintered silver is introduced to reduce the thermomechanical stresses in the module. A double-side cooled halfbridge module consisting of two 1200 V, 149 A SiC MOSFETs was designed, fabricated, and characterized. By using the sintered-Ag instead of solid copper interposers, our simulation results showed that, at a total power loss of 200 W, the thermomechanical stress at the most vulnerable interfaces (interposer-attach layer) was reduced by 42% and in the SiC MOSFET by 50% with a tradeoff of only 3.6% increase in junction temperature. The sintered-Ag interposers were readily fabricated into the desired dimensions without postmachining and did not require any surface finishing for die bonding and substrate interconnection by silver sintering. The porous interposers were also deformable under a low force or pressure, which helped to accommodate chip thickness and/or substrate-to-substrate gap variations in the planar module structure, thus simplifying module fabrication. The experimental results on the electrical performance of the fabricated SiC modules validated the success of using the porous silver interposers for fabricating planar, double-side cooled power modules.

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Analysis of transient current distribution characteristics of Press Pack IGBT

Wang

et al. 2018

IOP Conf. Ser.: Earth Environ. Sci.

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Application of press-pack IGBTs in traction refurbishment

Cited by 10 publications

References 2 publications

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Analysis of transient current distribution characteristics of Press Pack IGBT

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