Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE

Zorn, M.; Weyers, M.

doi:10.1016/j.jcrysgro.2004.10.164

Cited by 14 publications

(23 citation statements)

References 17 publications

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“…1b it can be seen that the strongest difference in the RA signal is at higher photon energies. This is the same in the AlGaAs case, where the strongest signal response to doping changes can be found around 3.8 eV [5,6]. This is advantageous for the response time since the penetration depth of the light decreases with increasing photon energy.…”

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 55%

“…[6] for comparison) together with the doping profile of the whole structure can nicely be seen. Due to the known dependence of the RA signal on doping type and concentration for AlGaAs [5] as well as for AlGaInP [19] the RA signal resolves the doping profile of the DBR and cavity layers together with the three QWs. More details on the growth process and the final performance of the VCSEL devices can be found in Refs.…”

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 98%

“…A corresponding RA fingerprint can be found in Ref. [5]. They consist of a GaAsP QW embedded in Al 0.5 Ga 0.5 As waveguide and Al 0.7 Ga 0.3 As cladding layers (see Ref.…”

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 99%

“…This is caused by a different As:P ratio in the GaAsP-QW resulting in different emission wavelength of the laser diode. In detailed investigations a correlation between the RA level during the QW growth and the photoluminescence emission wavelengths of the QW could be established [5] based on the known strong dependence of the RA signal around 2.5 eV and 3.8 eV on the GaAsP composition [16,17].…”

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 99%

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Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Zorn

Zettler²

2005

Physica Status Solidi (b)

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The use of the optical in situ techniques reflectance anisotropy (RA) and normalized reflectance (NR) for metal-organic vapour-phase epitaxy (MOVPE) growth processes of compound semiconductor devices is reviewed. The RA signal detects small deviations in the doping profile during growth of hetero-bipolar transistors and correlates to the emission wavelength of edge-emitting laser structure via its sensitivity to the quantum well composition. The NR signal is crucial for the alignment of distributed Bragg reflectors (DBR) in vertical-cavity surface-emitting lasers. With simultaneously performed RA and NR measurements the doping profile as well as the DBR alignment can be determined in situ. The composition monitoring in quaternary InGaAsP grown on InP is demonstrated using the RA signal for the As : P ratio while the NR signal is used for the Ga : In ratio. For AlGaInP on GaAs the NR signal is sensitive to both the aluminium and the indium content. Therefore these effects have to be separated via the determination of the growth efficiency of the respective materials using the growth rate calculated from the NR signal.

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Section: Monitoring Of Complete Growth Processesmentioning

confidence: 55%

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 98%

“…A corresponding RA fingerprint can be found in Ref. [5]. They consist of a GaAsP QW embedded in Al 0.5 Ga 0.5 As waveguide and Al 0.7 Ga 0.3 As cladding layers (see Ref.…”

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 99%

Section: Monitoring Of Complete Growth Processesmentioning

confidence: 99%

See 2 more Smart Citations

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Zorn

Zettler²

2005

Physica Status Solidi (b)

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“…For the experiments carried out without control of the desorption of deposited species in the reactor, a clear correlation between the first oscillation of the RA signature at 2.1 eV and the epilayer morphology could be established: the higher the anisotropy during the first oscillation of the GalnP nucleation layer, the higher the roughness of the layer, as seen in other systems like n GalnP-n AlGalnP [17]. These differences in roughness could be the product of different nucleation modes, i.e.…”

Section: Discussionmentioning

confidence: 86%

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

Barrigón

Galiana

Rey‐Stolle

2011

Journal of Crystal Growth

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This work summarizes the observations made on the variation and time evolution of the reflectance Kevwordsanisotropy signal during the MOVPE growth of GalnP nucleation layers on Germanium substrates. This Al Reflectance anisotropy spectroscopy ' n s '' u monitoring tool is used to assess the impact of different nucleation routines and reactor Al. Growth monitoring conditions on the quality of the layers grown. This comparison is carried out by establishing a A2. Metalorganic vapor phase epitaxy correlation between reflectance anisotropy signature at 2.1 eV and the morphology of the epilayers Bl. Phosphides evaluated by atomic force microscopy (AFM). This paper outlines the potential of reflectance anisotropy B2. Semiconducting germanium t0 pre dict, explore, and therefore optimize, the best growth conditions that lead to a high quality III-V epilayer on a Ge substrate.

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE

Cited by 14 publications

References 17 publications

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

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