Application study of simply and low cost numerical aperture increasing lens (NAIL) system for OBIRCH and EMMI in backside failure analysis

Liu, Tian; Zhang, Guoqiang; Lan, Kuibo; Wen, Gaojie; Wang, Dong

doi:10.1109/ipfa.2015.7224451

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…m n m p 3/4 e − Eg 2k B T (10) where h is the Planck constant, and m n and m p are the effective masses of electrons and holes, respectively. Firstly, the Formulas ( 6)-( 10) are derived, then n i , ϕ F , V T , µ are substituted into ∆I D , which leads to the change in MOSFET's electrical parameter caused by temperature,…”

Section: Model Of Tlsmentioning

confidence: 99%

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Preliminary Study on Automatic Detection of Hard Defects in Integrated Circuits Based on Thermal Laser Stimulation

Cai

et al. 2023

Photonics

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Locating the fault position is a crucial part of the failure mechanism analysis of integrated circuits. This paper proposes a hard defect locating system based on Thermal Laser Stimulation (TLS) technology. The equation for laser-induced changes in the electrical parameters of semiconductor devices is a good guide to the hardware and software design of the hard defect locating system. The scanning mode of fast total scanning combined with slow point-to-point scanning can quickly locate abnormal areas. A modified median absolute difference (MAD) method is applied to the extraction of anomalous data. The system software can automatically and collaboratively control the 3D mobile station, laser, and signal acquisition unit. It also can intuitively display the distribution of abnormal points on the infrared image. Using a failure MRAM chip and a good one to conduct a comparative test, the abnormal points distributed on the infrared image of the chip indicate that the failure area is in the digital module or eFuse module of the chip, and the Emission Microscopy (EMMI) experiment also verifies the accuracy of the test system.

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Section: Model Of Tlsmentioning

confidence: 99%

“…Many studies have been conducted on the application of the OBIRCH technique: Ref. [10] proposed a numerical aperture increasing lens (NAIL) technology to increase image resolution. Ref.…”

Section: Introductionmentioning

confidence: 99%

Preliminary Study on Automatic Detection of Hard Defects in Integrated Circuits Based on Thermal Laser Stimulation

Cai

et al. 2023

Photonics

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show abstract

“…A backside photon Emission Microscopy (EMMI) is used for finding leakage locations of the failed device [30], [31]. An Indium gallium arsenide camera utilized in the EMMI cannot only visualize patterns of the die but also detect minute photon emission in the regions where the leakage current flows.…”

Section: A Defect Localizationmentioning

confidence: 99%

How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

Song

Munk‐Nielsen

Uhrenfeldt

2020

IEEE Trans. Power Electron.

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Commercial gallium nitride (GaN) high-electronmobility transistors used for power electronics applications show superior performance compared to silicon (Si)-based transistors. Combined with an increased radiation hardening properties, they are key candidates for high-performance power systems in a harsh environment, such as space. However, for this purpose, it is key to know the potential failure mechanisms (FMs) of the devices in depth. Here, we demonstrate how the repeated thermomechanical stress in a power cycling (PC) test within specified operating conditions destroys the GaN device. Based on leakage current localization analysis, we identify an FM with a yet unknown root cause. Utilizing emission microscopy, focused ion beam cutting, and scanning electron microscope techniques, it is revealed that multilayer cracks of a GaN die are triggered by a commercial leading package structure, which shows excellent capability under frequent thermomechanical stress. Through multiphysics simulations, it is shown that the structural factors that lie behind the strong performing component properties inside the package ultimately are directly related to the failure pattern. This article is accompanied by a video demonstrating dynamic thermal distribution difference between thermography measured in a practical experiment and a multiphysics simulation result during a single PC of a PC test. This article is accompanied by a supplementary figures file demonstrating test environment, preparation process of specimens, and reverse engineering results for the simulation model.

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Fault isolation at P/N junction by nanoprober

Liu¹,

Chiang²,

Yen³

et al. 2016

Microelectronics Reliability

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Application study of simply and low cost numerical aperture increasing lens (NAIL) system for OBIRCH and EMMI in backside failure analysis

Cited by 4 publications

References 8 publications

Preliminary Study on Automatic Detection of Hard Defects in Integrated Circuits Based on Thermal Laser Stimulation

Preliminary Study on Automatic Detection of Hard Defects in Integrated Circuits Based on Thermal Laser Stimulation

How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

Fault isolation at P/N junction by nanoprober

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