Applications

Kamins, T. I.

doi:10.1007/978-1-4615-5577-3_6

Cited by 5 publications

(20 citation statements)

References 135 publications

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“…The gap between the substrate and the free structures is 2 µm. The measured resistivity of the B-doped poly-Si was 3 × 10 −3 cm at room temperature, which corresponds to a doping concentration of approximately 8 × 10 19 atoms cm −3 [6]. The resistivity of highly doped poly-Si approaches the resistivity of highly doped single-crystal Si [6], thus the estimated intrinsic temperature of the poly-Si with a doping concentration of 8 × 10 19 B atoms cm −3 [7] is 1300 K.…”

Section: Distinction Of Reversible and Irreversible Actuation Regionsmentioning

confidence: 89%

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Distinction of the irreversible and reversible actuation regions of B-doped poly-Si based electrothermal actuators

Deladi¹,

Krijnen²,

Elwenspoek³

2004

J. Micromech. Microeng.

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Polycrystalline-Si microactuators based on electrothermal principles exhibit many interesting features but their practical use is severely limited by permanent damage that may occur due to accidental overheating. Under these conditions, polycrystalline-Si structures will display irreversible structural changes ranging from slight geometrical deformations to complete damage. In this paper, an approach is presented to avoid permanent structural deformation of B-doped polycrystalline-Si based electrothermal actuators by overheating. The method allows us to distinguish reversible and irreversible actuation conditions and is demonstrated under environmental and vacuum conditions. It enables full utilization of the capabilities of B-doped polycrystalline-Si based electrothermal actuators with reproducible performance.

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Section: Distinction Of Reversible and Irreversible Actuation Regionsmentioning

confidence: 89%

“…The dopant concentration for polycrystalline-Si at which the number of active carriers saturates is approximately 2 × 10 20 [6]. According to [7], higher dopant concentration causes higher intrinsic temperature that can be well above the temperature limit at which plastic deformation initiates due to Joule heating.…”

Section: Introductionmentioning

confidence: 99%

Distinction of the irreversible and reversible actuation regions of B-doped poly-Si based electrothermal actuators

Deladi¹,

Krijnen²,

Elwenspoek³

2004

J. Micromech. Microeng.

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“…Polysilicon is a widely used key material in the photovoltaic systems, energy-storage devices, and semiconductor sectors. − With the development of these industries, the preparation of high-quality and high-purity polysilicon has become increasingly crucial. Currently, the most common method for preparing high-purity polysilicon is chemical vapor deposition (CVD), which primarily employs silicon hydrogen compounds as precursors, as shown in Figure .…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of the Effect of Surface Heteroatoms on Silane Dissociation

Gai,

Yi,

Ding

et al. 2023

J. Phys. Chem. C

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With the rapid development of renewable energy and semiconductor industries, the preparation of high-quality polysilicon has received more and more attention. Chemical vapor deposition (CVD) is one of the most important methods for high-quality polysilicon fabrication. In this paper, density-functional theory (DFT) is employed to investigate the effect of surface heteroatoms on the growth of polysilicon prepared by CVD. The dissociation activation energy of silane and the migration energy barrier of surface silicon atoms are calculated on three types of silicon (111) surfaces, including a clean silicon surface, a silicon surface with oxygen, and a silicon surface with hydrogen. The calculation results reveal that the activation energy of silane dissociation on the clean silicon surface is 1.71 eV, higher than 1.04 eV on oxidized silicon surfaces and similar to 1.74 eV on silicon surfaces with hydrogen. Therefore, on a partially oxidized silicon substrate silicon deposition would preferentially occur in the oxidized region. On a hydrogenated silicon substrate, silicon deposition would uniformly take place over the entire surface. Furthermore, surface migration barriers of silicon atoms are calculated, with values of 0.27 0.24, and 0.05 eV on clean, oxidized, and hydrogenated surfaces, respectively. The lower migration barriers on the hydrogenated substrate indicate more uniform silicon deposition. Subsequently, this finding is confirmed by experimental evidence. This study provides a theoretical basis for the preparation of high-quality polysilicon and serves as valuable operational guidance for industry-level production of uniform and dense polysilicon rods.

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“…[9] Moreover, poly-Si is compatible with the mature integrated circuit (IC) manufacturing process, and its thermal stability is very good. [13] In 2005, Raskin et al developed the TR-SOI substrate. [11] Poly-Si film is used as the traprich layer for the TR-SOI substrate.…”

mentioning

confidence: 99%

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

Zhu¹,

Chang²,

Gao³

et al. 2018

Chinese Phys. Lett.

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Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator (TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2 (TR-G2) is higher than that of generation 1 (TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon (HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.

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Applications

Cited by 5 publications

References 135 publications

Distinction of the irreversible and reversible actuation regions of B-doped poly-Si based electrothermal actuators

Distinction of the irreversible and reversible actuation regions of B-doped poly-Si based electrothermal actuators

First-Principles Study of the Effect of Surface Heteroatoms on Silane Dissociation

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

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