Applications and issues for ferroelectric NVMs

MOCVD of Bismuth Oxides: Transport Properties and Deposition Mechanisms of the Bi(C6H5)3 Precursor

“…Bi 2 O 3 -based layered-perovskites belonging to the Aurivillius family are promising materials for superconducting electronics and nonvolatile ferroelectric memories (NVFeRAM). − Among ferroelectric oxides, SrBi 2 Ta 2 O 9 (SBT) has a superior endurance resistance compared to other ferroelectric perovskites such as (Pb x Zr 1 - x )TiO 3 . , Recently, (Bi 1- x La x ) 4 Ti 3 O 12 (BLT) has been introduced, promising a better remnant polarization, lower processing temperature, and similar endurance reliability. − The main reason preventing the widespread commercialization of NVFeRAMs so far has been the lack of successful integration of the deposition processes of these materials with established Si-based CMOS technologies. High-level integration required by commercially competitive 1T1C stacked ferroelectric cells is entirely suited to MOCVD due to the better conformality of deposition over these 3-dimensional cell structures and a higher throughput compared to that of other commercially available deposition techniques such as chemical solution deposition (CSD) and PVD. , …”

Temperature-Dependent Electrical Characterization of Multiferroic BiFeO3 Thin Films

“…1 Ferroics are uniquely capable of adapting to a variety of tasks within information storage technology due to their ability to exhibit hysteresis-a quality by which they are able to retain a switchable, permanent polarization (ferroelectric), magnetization (ferromagnetic), or deformation (ferroelastic) when once exposed to an electric or magnetic field, or mechanical stress. The polarization that can be induced in the material can function as binary for storage in a non-volatile memory device that can easily be rewritten when exposed to another field, or stored indefinitely.…”

Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System

“…[6][7][8][9][10][11] Among them, the MOCVD technique is most well-suited for the semiconductor industry, especially due to the higher step coverage compared to other deposition techniques. [12][13][14] Nevertheless, the choice of a good set of metal-organic source precursors is still an open question and still represents the major challenge. In this context, any industrial application requires a careful and reproducible control of the properties of films and, in turn, the full understanding of parameters affecting the film growth.…”

“…SrBi 2 Ta 2 O 9 (SBT) ferroelectric films have been extensively investigated for new, nonvolatile ferroelectrics memory applications (NVFeRAM) due to their superior endurance. − SBT films have been prepared by several techniques including sol−gel, metal-organic deposition (MOD), pulsed laser ablation, and metal-organic chemical vapor deposition (MOCVD). − Among them, the MOCVD technique is most well-suited for the semiconductor industry, especially due to the higher step coverage compared to other deposition techniques. − Nevertheless, the choice of a good set of metal-organic source precursors is still an open question and still represents the major challenge. In this context, any industrial application requires a careful and reproducible control of the properties of films and, in turn, the full understanding of parameters affecting the film growth.…”