Approaches for 193nm and 248nm First and Second Generation Radiation Sensitive Developable Bottom Anti Reflective Coatings (DBARC)

Houlihan, Francis M.; Miyazaki, Syuji; Dioses, Alberto; Zhang, Lin; Ubayashi, Yuki; Ohta, Kazuyoshi; Oberlander, Joseph E.; Krawicz, Alexandra; Vasanthan, Sumathy; Li, Meng; Wei, Yayi; Lu, Peng-Han; Neisser, Mark

doi:10.2494/photopolymer.21.383

Cited by 4 publications

(6 citation statements)

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“…The DBARC formulations were prepared by dissolving a hydroxyl polymer, a crosslinker and a photoacid generator in a solvent and the general structure is shown in Fig. 1 [8][9][10]. 193 nm resist formulations were chemically amplified resists consisting of an alicyclic methacrylate/acrylate polymer, a photoacid generator, an acid quencher and a casting solvent [14,15].…”

Section: Methodsmentioning

confidence: 99%

“…dense lines are underdeveloped and show footing and isolated lines show undercut due to over development [4,5]. Photosensitive DBARCs have photoimageable properties and resolve patterns irrespective of upper resist layer [6][7][8][9][10][11][12]. Therefore, they have better resolution and through pitch performance which are required for logic devices and critical layers.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, they have better resolution and through pitch performance which are required for logic devices and critical layers. Previously we reported our first generation DBARC based on a copolymer of benzyl methacrylate (BMA) and mevalonic lactone methacrylate (MLMA) [7] and second generation approach with a crosslink/decrosslink reaction of vinyloxy materials with hydroxyl containing polymers [9,10]. More recently we discussed DBARC/resist mismatching issues in terms of sensitivity and resolved the issues both from process and formulation sides [13].…”

Section: Introductionmentioning

confidence: 99%

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Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)

Kudo¹,

Chakrapani²,

Dioses³

et al. 2010

SPIE Proceedings

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Developable BARCs (DBARCs) are useful for implant layers because they eliminate the plasma etch step avoiding damage to the plasma sensitive layers during implantation. It is expected that DBARC will also be used for non-implant layers and double exposure technology. AZ has pioneered DBARC based on photosensitive cleave as well as crosslink/decrosslink mechanisms. In this paper, we focus on various processing factors for 193nm DBARC and discuss the influences of prewet, thickness, topography and substrates on lithographic performance. Prewet of DBARC before resist coating deteriorated performance, however, it was resolved by modifying DBARC formulations. The optimized DBARC showed both optical and lithographic performance comparable to conventional BARCs. DBARCs minimized reflection from the substrates and notching of patterns was improved observed on silicon oxide topography. This paper includes simulation, DBARC contrast curve analyses, and recent dry and immersion exposure results of DBARC.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)

Kudo¹,

Chakrapani²,

Dioses³

et al. 2010

SPIE Proceedings

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“…For example, there have been reports of partially imidized polyamic acids in which solvent insolubility is controlled by the degree of imidization 9 . More recently crosslink-decrosslink systems have been reported where the DBARC is rendered insoluble by reaction of a hydroxy functionalized polymer with a multifunctional vinyl ether during DBARC post apply bake [10][11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

Progress towards production worthy developable BARCs (DBARCs)

Cameron¹,

Amara²,

Prokopowicz³

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection control such as provided by a conventional BARC. However, implant layers cannot withstand BARC open etch thereby making DBARC an attractive solution as the resist and DBARC are simultaneously dissolved during the development step leaving the underlying substrate ready for implantation. In comparison to current implant processes with top anti-reflective coatings (TARC), DBARCs are anticipated to offer improvements in reflection control which would translate to improved CDU and increased process window for both KrF and ArF implants. Indeed, this area has long been considered the ideal insertion point for DBARC technology.The second area where DBARC technology can make a significant impact is in non-implant lithography. In this large segment, the ability to replace a conventional BARC with a DBARC affords the device maker the ability to simplify both lithographic and integration processes. By replacing the BARC with a DBARC, the BARC open etch is negated. Furthermore, by applying this strategy on multilayer stacks it is possible to greatly simplify the process by avoiding both CVD steps and pattern transfer steps thereby easing integration. In this area, DBARC technology could have merit for low k 1 KrF and ArF (dry) lithography as well as in immersion ArF processes. This paper describes our results in designing production worthy DBARCs for both implant and non-implant applications. A newly developed KrF DBARC platform is evaluated for logic implant applications and compared to a standard TARC implant process. Post develop residue and defectivity are checked for the new platform and the results compared to production worthy BARC and implant resists. A new ArF platform was also developed and initial lithographic results are reported for an implant application. Several non-implant applications were also investigated and results are reported for high resolution KrF and ArF (dry) lithography as well as an immersion ArF process.

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“…Photosensitive DBARCs have photoimageable properties and resolve patterns irrespective of upper resist layer [9][10][11][12][13][14][15][16][17][18]. Therefore, they have better resolution and through-pitch performance which are required for logic devices and critical layers.…”

mentioning

confidence: 99%

PAG and Quencher Effects on DBARC Performance

Padmanaban

Kudo

Chakrapani

et al. 2011

J. Photopol. Sci. Technol.

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Approaches for 193nm and 248nm First and Second Generation Radiation Sensitive Developable Bottom Anti Reflective Coatings (DBARC)

Abstract: We review approaches that we have developed at 193 and 248 nm for first and second generation Radiation Sensitive Developable Bottom Anti Reflective Coatings (DBARC) and give an account of our most recent results for both types of DBARC's

Cited by 4 publications

References 1 publication

Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)

Process optimization consideration for 193nm developable bottom anti-reflective coatings (DBARCs)

Progress towards production worthy developable BARCs (DBARCs)

PAG and Quencher Effects on DBARC Performance

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