Aqueous Chemical Solution Deposition of Ferroelectric Thin Films

Bael, Marlies K. Van; Nelis, Daniel; Hardy, An; Mondelaers, D.; Werde, Kristof Van; D’Haen, Jan; Vanhoyland, G.; Rul, H. Van den; Mullens, J.; Poucke, L. C. Van; Frederix, Filip; Wouters, Dirk J.

doi:10.1080/10584580215353

Cited by 64 publications

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“…27 A hot plate treatment was carried out on each deposited layer at 90°C and 190°C (2 minutes). An intermediate anneal was carried out in a rapid thermal anneal system (Accutherm AW-610), with a chamber flush of 2 minutes, a heating rate of 10°C s −1 , an isothermal period and a slow cooling (>5 min) in a N 2 environment (10 SLPM).…”

Section: Phase Formationmentioning

confidence: 99%

Aqueous citrato-oxovanadate(iv) precursor solutions for VO₂: synthesis, spectroscopic investigation and thermal analysis

et al. 2014

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An aqueous precursor solution, containing citrato-VO(2+) complexes, is synthesized for the formation of monoclinic VO2. With regard to the decomposition of the VO(2+) complexes towards vanadium oxide formation, it is important to gain insights into the chemical structure and transformations of the precursor during synthesis and thermal treatment. Hence, the conversion of the cyclic [V4O12](4-) ion to the VO(2+) ion in aqueous solution, using oxalic acid as an acidifier and a reducing agent, is studied by (51)Vanadium nuclear magnetic resonance spectroscopy. The citrate complexation of this VO(2+) ion and the differentiation between a solution containing citrato-oxalato-VO(2+) and citrato-VO(2+) complexes are studied by electron paramagnetic resonance and Fourier transform infra-red spectroscopy. In both solutions, the VO(2+) containing complex is mononuclear and has a distorted octahedral geometry with a fourfold R-CO2(-) ligation at the equatorial positions and likely a fifth R-CO2(-) ligation at the axial position. Small differences in the thermal decomposition pathway between the gel containing citrato-oxalato-VO(2+) complexes and the oxalate-free gel containing citrato-VO(2+) complexes are observed between 150 and 200 °C in air and are assigned to the presence of (NH4)2C2O4 in the citrato-oxalato-VO(2+) solution. Both precursor solutions are successfully used for the formation of crystalline vanadium oxide nanostructures on SiO2, after thermal annealing at 500 °C in a 0.1% O2 atmosphere. However, the citrato-oxalato-VO(2+) and the oxalate-free citrato-VO(2+) solution result in the formation of monoclinic V6O13 and monoclinic VO2, respectively.

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Section: Phase Formationmentioning

confidence: 99%

Aqueous citrato-oxovanadate(iv) precursor solutions for VO₂: synthesis, spectroscopic investigation and thermal analysis

et al. 2014

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“…A variety of other methods, including Pechini, 21 citrate, 86 nitrate, 23 and aqueous processes 87 have also been used. For a discussion of these methods, the reader is referred to Refs.…”

Section: Other Processing Routesmentioning

confidence: 99%

Chemical Solution Deposition—Basic Principles

Schwartz

Narayanan

2008

Solution Processing of Inorganic Materials

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“…To obtain solid gels the solution was dried in a Petri dish (furnace, 60°C). To deposit thin films, 4 layers are spin-coated (3000 rpm, 30 s) onto square pieces (~2.5x2.5 cm 2 ) of p-type 1.2 nm SiO 2 /Si (100), cleaned in a sulfuric acid peroxide mixture and ammonia peroxide mixture [11]. Hot plate treatments are carried out for each layer to decompose the organic components (260°C/2', 480°C/2').…”

Section: Methodsmentioning

confidence: 99%

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

et al. 2008

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Zirconia ultrathin films were deposited by aqueous chemical solution deposition, using citratoperoxo-Zr(IV) precursors with different citric acid content. The precursor synthesis, thermal decomposition and crystallization of oxide powders was studied. This showed an effect of the citric acid content in every stage. The precursors were applied for the deposition of uniform, ultrathin films (< 30 nm thickness) as well. Tetragonal ZrO 2 crystallized starting from 500°C for thin films with a thickness of 10 nm. This was independent of the citric acid content in the precursor. The topography after annealing at 600°C was also similar. However, annealing at higher temperatures led to coarser grain size. The dielectric constant was high (~21-22) and comparable to ZrO 2 deposited by atomic layer deposition.

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Aqueous Chemical Solution Deposition of Ferroelectric Thin Films

Cited by 64 publications

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Aqueous citrato-oxovanadate(iv) precursor solutions for VO₂: synthesis, spectroscopic investigation and thermal analysis

Aqueous citrato-oxovanadate(iv) precursor solutions for VO₂: synthesis, spectroscopic investigation and thermal analysis

Chemical Solution Deposition—Basic Principles

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

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Aqueous Chemical Solution Deposition of Ferroelectric Thin Films

Cited by 64 publications

References 0 publications

Aqueous citrato-oxovanadate(iv) precursor solutions for VO2: synthesis, spectroscopic investigation and thermal analysis

Aqueous citrato-oxovanadate(iv) precursor solutions for VO2: synthesis, spectroscopic investigation and thermal analysis

Chemical Solution Deposition—Basic Principles

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

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Product

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Aqueous citrato-oxovanadate(iv) precursor solutions for VO₂: synthesis, spectroscopic investigation and thermal analysis

Aqueous citrato-oxovanadate(iv) precursor solutions for VO₂: synthesis, spectroscopic investigation and thermal analysis