Metal oxide semiconductors realized
using solution processes have
received a great deal of attention because of their low cost and simple
fabrication. One major problem associated with the solution approach
is the presence of undesired impurity species introduced by precursor
solutions. Here, we investigated the effects of impurities on the
electrical properties and device performance of metal oxide semiconductor
thin-film transistors. It was found that chlorine residues inhibit
the formation of the oxide framework and impede electron transport
in a chloride precursor-derived metal oxide. To minimize the impurity
concentration and produce high-quality oxide semiconductors, we used
perchloric acid to remove excess chlorine species in a facile redox
reaction. After the removal of chlorine species, the oxygen lattice
concentration increased from 53 to 62%, and the field-effect mobility
of indium oxide thin-film transistors was improved by >20-fold.
Furthermore,
devices treated with perchloric acid showed superior electrical stability
under bias stress tests, corresponding to an improved oxide quality.