Low-Impurity High-Performance Solution-Processed Metal Oxide Semiconductors via a Facile Redox Reaction

Abstract

Metal oxide semiconductors realized using solution processes have received a great deal of attention because of their low cost and simple fabrication. One major problem associated with the solution approach is the presence of undesired impurity species introduced by precursor solutions. Here, we investigated the effects of impurities on the electrical properties and device performance of metal oxide semiconductor thin-film transistors. It was found that chlorine residues inhibit the formation of the oxide framework and impede electron transport in a chloride precursor-derived metal oxide. To minimize the impurity concentration and produce high-quality oxide semiconductors, we used perchloric acid to remove excess chlorine species in a facile redox reaction. After the removal of chlorine species, the oxygen lattice concentration increased from 53 to 62%, and the field-effect mobility of indium oxide thin-film transistors was improved by >20-fold. Furthermore, devices treated with perchloric acid showed superior electrical stability under bias stress tests, corresponding to an improved oxide quality.

P-6: Aqueous Precursor Based Solution-Processed Metal Oxide Semiconductor

“…[14] contributes to a b NO 3 ) 3 -derived I 24.0 cm 2 V -1 s -1 lusion is also s s. [10] l strategy to im irable anions wi portionation bet will not introduc lorine (Cl 2 ), a ctor film. [8] Wi ses the field eff ( Figure 2).…”

“…Details can be found in our previous publications. [7,8] For redox reaction, 221.1 mg of indium chloride (InCl 3 , Aldrich, 99.999%) and 0.0861 g of perchloric acid (HClO 4 , Aldrich, ACS reagent, 60%) are added into 10 mL of water. 2-Methoxyethanol (2-ME) solution was synthesized by adding 0.05 mL of ammonium hydroxide (NH 4 OH, 28.0%, Aldrich, 99.99%), 0.05 mL of acetylacetone (AcAc, Aldrich, 99%) and 300 mg of indium nitrate hydrate (In(NO 3 ) 3 ·xH 2 O, Aldrich, 99.999%) into 10 mL 2-ME.…”

P‐1.10: Solution‐processed metal oxide semiconductors fabricated with oxygen radical assisting perchlorate aqueous precursors through a new low‐temperature reaction route

“…Therefore, the trade-off between the processing temperature and the performance of solution-processed MO-TFTs remains a great challenge. [4] Several methods for low-temperature, high-performance MO-TFTs have been proposed, such as low-thermal budget processes and new chemical approaches. [4] Low-thermal budget processes provide external energy such as ultraviolet irradiation, [5] microwave annealing, [6] infrared exposure, [7] laser annealing, [8] and high-pressure annealing [9] to reduce the thermal budget.…”

“…Rim and Yang et al reported that adding perchloric acid into InCl 3 precursors to eliminate chloridion at low temperature. [4] In addition, Kanatzidis and Facchetti et al reported combustion processes to fabricate MO films at low temperature. [12][13][14] Then, Cho et al reported "self-combustion" method which choice specific metal salt to achieve the combustion reaction without any other addition agents.…”

Hybrid Cluster Precursors of the LaZrO Insulator for Transistors: Properties of High-Temperature-Processed Films and Structures of Solutions, Gels and Solids

“…Regarding the candidate materials, metal oxides are being employed in increasingly diverse applications, such as in display-driving devices, particularly transistors, because of their high electrical performance and thermal and chemical stability under ambient conditions. Solution processing of oxide transistors has been intensively studied in recent years, with several low-temperature (below 250 °C) approaches being developed and device fabrication on flexible substrates being demonstrated123456789.…”