Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Abstract

We demonstrate the growth of ultra-thin (~5 nm) indium ytterbium oxide (In-Yb-O) thin film using a simple vacuum-free aqueous solution approach for the first time. The influences of Yb addition on the microstructural, chemical, optical, and electrical properties of In2O3 are well investigated. The analyses indicate that Yb dopant could suppress oxygen vacancy defects effectively owing to the lower standard electrode potential, lower electronegativity, and stronger metal-oxide bond strength than that of In. The optimized In-Yb-O thin-film transistors (TFTs) exhibit excellent electrical performance (mobility of 8 cm2/Vs and on/off ratio of ~108) and enhanced stability. The triumph of In-Yb-O TFTs is owing to the high quality In2O3 matrix, the remarkable suppressor of Yb, and the nanometer-thin and atomically smooth nature (RMS: ~0.26 nm) of channel layer. Therefore, the eco-friendly water-induced ultra-thin In-Yb-O channel provides an excellent opportunity for future large-scale and cost-effective electronic applications.

Universal Way to Enhance Solution-Processed High-κ Oxide Dielectrics Performance by Sulfate Incorporation

“…The well-defined Si/ shows epitaxial-like crystalline nature with a lattice spacing of 0.29 nm, corresponding to the (222) plane of the bixbyite structure. 37 The fast Fourier transform (FFT) analysis in Figure 5e also confirms the above conclusion. The nanometerthin and highly crystalline nature of In 2 O 3 as well as excellent AlSO x /In 2 O 3 interface can guarantee efficient electron transport.…”

“…The AlSO x and In 2 O 3 layers have thicknesses of 76 and 3 nm, respectively. The HRTEM image in Figure d reveals that AlSO x is amorphous, while In 2 O 3 shows epitaxial-like crystalline nature with a lattice spacing of 0.29 nm, corresponding to the (222) plane of the bixbyite structure . The fast Fourier transform (FFT) analysis in Figure e also confirms the above conclusion.…”

“…The fast Fourier transform (FFT) analysis in Figure e also confirms the above conclusion. The nanometer-thin and highly crystalline nature of In 2 O 3 as well as excellent AlSO x /In 2 O 3 interface can guarantee efficient electron transport. , The corresponding energy-dispersive X-ray spectroscopy mapping is shown in Figure S4.…”

“…The nanometerthin and highly crystalline nature of In 2 O 3 as well as excellent AlSO x /In 2 O 3 interface can guarantee efficient electron transport. 37,38 The corresponding energy-dispersive X-ray spectroscopy mapping is shown in Figure S4. Figure 5f reports the positive bias stress (PBS) stability for In 2 O 3 TFTs comprising AlSO x dielectrics with and without Sdoping.…”

Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications

“…The characteristic diffraction peaks of (222) (dominant peak), (400), (440), and (622) are assignable to bixbyite In 2 O 3 (JCPDS 06-0416). No P 2 O 5 or other phases are observed from the diffraction pattern, which means that P addition does not break the In 2 O 3 matrix crystalline structure [ 18 , 19 ]. We suppose that the added P replaces the In sites and maintains the cubic In 2 O 3 structure when the P doping amount is relatively low; however, the diffraction peak intensity gradually decreases, suggesting the reduction of crystallinity after P incorporation [ 20 ].…”