Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications

Abstract

Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carriedo ut using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II).T hisa pproach provides further understanding towards the oxide formation process under am oderate temperature regime by employment of well-defined coordination compounds.A ll precursor compoundsw ere fully characterizedb ys pectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by ac ombination of differentials canningc alorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). For all precursors am ultistep decomposi-tion involving ac omplex redox-reaction pathway under in situ formation of nitrogen containing molecular speciesw as observed. Controlled thermalc onversion of am ixture of the indium,g allium and zinc urea nitratec omplexes into ternary amorphous IGZO films could thus be achieved.T hin film transistors (TFTs) were fabricated from ad efined compositional mixture of the molecular precursors. The TFT devices exhibited decent chargec arrierm obilitieso f0 .4 and 3.1 cm 2 /(Vs) after annealing of the deposited films at temperaturesa sl ow as 250 and 350 8C, respectively.T his approach represents as ignificant step furthert owards al ow temperature solution processing of semiconducting thin films.[ + ++ + ] X-ray crystal structure determination.[ + + ] XPS investigation.Supporting information and the ORCID identification number(s) for the author(s) of this article can be found under: https://doi.

Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics

“…In the past decade, several laboratories including this one have shown that incorporating combustive fuel-oxidizer redox couples in MO-precursor solutions yields dense, electronic-quality MO nanometer-thick films at far lower temperatures than conven-tional sol-gel processes (15,35,36). Nevertheless, the subsequent post-film-deposition annealing step in combustion can require up to 2 h and is essential for lattice densification and eliminating organic contaminants (37,38). Here, we report that a liquid MO precursor combining a coordinating fuel, AcAcH, a fluorinated cofuel, FAcAcH (Fig.…”

Trends in Low‐Temperature Combustion Derived Thin Films for Solution‐Processed Electronics

“…Another way of reducing carbonaceous load is to incorporate both fuel-and oxidizer-ligand in a single chemical species. [70] Figure 18 shows the Oak Ridge thermal ellipsoid plots of water-soluble indium nitrate-urea [In(urea) 6 (NO 3 ) 3 ], and zinc nitrate-urea [Zn(urea) 4…”

“…Such complexes are directly utilized in the fabrication of IGZO TFTs and the performance parameters, such as μ, V th , and I on :I off is estimated to be 3.1 cm 2 V −1 s −1 , 4.3 V, and ≈10 7 , respectively. [70] Although combustible precursors fall into the category of soluble chemical precursors, their utilization is also demonstrated in the nanoparticle-based system as electrical lowtemperature solder. [71] The thin films processed via nanoparticle precursor route show poor electrical connectivity due to retained surface capping agents, which compromises the inherent electrical characteristics of functional nanoparticles.…”

“…Another way of reducing carbonaceous load is to incorporate both fuel‐ and oxidizer‐ligand in a single chemical species. [ 70 ] Figure shows the Oak Ridge thermal ellipsoid plots of water‐soluble indium nitrate–urea [In(urea) 6 (NO 3 ) 3 ], and zinc nitrate–urea [Zn(urea) 4 (H 2 O) 2 ][NO 3 ] 2 complexes; where nitrates are the oxidizers and urea is the fuel. Such complexes are directly utilized in the fabrication of IGZO TFTs and the performance parameters, such as μ, V th , and I on : I off is estimated to be 3.1 cm 2 V −1 s −1 , 4.3 V, and ≈10 7 , respectively.…”

A Dual‐Gate InGaZnO4‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

“…In industry, the metal oxide composition material InGaZnO 4 (IGZO) was originally proposed for display applications . Due to its high transparency, uniformity, and mobility, IGZO has significant attention for various applications and their related TFT reliability issues . In addition, IGZO has a WBG characteristic of 3.1–3.4 eV, depending on the composition ratio .…”