Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. etal-oxide (MO) semiconductors, especially in amorphous phases, represent an appealing materials family for next generation electronics owing to their high carrier mobilities, good environmental/thermal stability, mechanical flexibility, and excellent optical transparency (1-3). MO films complement organic semiconductors (4, 5), carbon/oxide nanomaterials (6), and flexible silicon (7, 8) for enabling new technologies, such as flexible displays and printed sensors. For fabricating high-performance electronics with acceptable fidelity, conventional processes require capital-intensive physical/chemical vapor deposition techniques. Capitalizing on the solubility of MO precursors in common solvents, solution methods have been used to fabricate semiconducting MO layers for thin-film transistors (TFTs). However, the fabrication process and field-effect mobilities of these TFTs are not competitive with the corresponding vapor-deposited (e.g., sputtered) devices (9), and developing routes to solution-derived MO TFTs with technologically relevant thicknesses and performance comparable to state of the art vapor-deposited devices is a critical milestone for MO electronics evolution.Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10-13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14). Progress toward significantly reducing the processing temperatures of sol gel-derived MO films has afforded excellent TFT mobilities; however, achieving both reproducible high-performance and stable device operation remains an unsolved issue for Ga-containing materials (15). Sol-gel on-a-chip for indium-zinc-oxide (3) and deep-UV ...

Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

and ZnO for thin fi lm transistor (TFTs) on SiO 2 dielectrics provides electron mobilities in excess of 16 and 25 cm 2 V −1 s −1 for 250 °C and 400 °C growth, respectively. [ 2b , 4b , 18 ] Furthermore, to achieve low-voltage operation and scaling of the TFT dimensions, high dielectric constant ( k = 7-20) MO gate dielectrics, such as Al 2 O 3 , Y 2 O 3 , ZrO 2 , HfO 2 , have been utilized. [ 9 ] However, the morphological and microstructural requirements for TFT dielectric layers are more stringent than for semiconducting layers, to ensure low leakage currents, high breakdown voltages, high capacitances, and minimal bulk/ interface trap densities. [ 5c , 10 ] Thus, high processing temperatures (>400 °C) and signifi cant thicknesses (≥100 nm) are typically required for solution-processed dielectric fi lms to ensure complete organic component degradation and formation of dense MO networks. [ 11 ] For example, pioneering work of Anthopoulos demonstrated that spray-coating ZnO TFTs at 400 °C affords electron mobilities greater than 40 cm 2 V −1 s −1 and ≈10 7 on/off current modulation ratios on a ≈100 nm HfO 2 gate dielectric grown by spray pyrolysis at 450 °C. [ 12 ] Similarly, spin-coated 100 nm thick ZrO 2 dielectric fi lms annealed at 450 °C enable indium tin zinc oxide (ITZO)/indium gallium zinc oxide (IGZO) bilayer TFTs with high mobilities of ≈40 cm 2 V −1 s −1 and 3 V operating voltages. [ 9c ] Recently, dilute solution-adapted wire bar-coating was employed to fabricate highquality 10-40 nm thick Al 2 O 3 and HfO 2 dielectric layers. However, post-deposition temperatures were very high (≈400 °C) and the resulting IGZO TFTs exhibited an average mobility of only 5 cm 2 V −1 s −1 . [ 2d ] This laboratory recently reported combustion synthesis as an effective low-temperature growth technique for solutionprocessed MO semiconducting fi lms. [ 13 ] Using liquid metal + oxidizer + fuel precursors, localized and highly exothermic chemical transformations occur within the spin-coated fi lms, affording rapid M-O-M lattice condensation at temperatures of 200-300 °C. However, gas evolution during the short processing times interferes with fi lm continuity and densifi cation for >5 nm fi lms, thus requiring time-consuming multi-step coating and annealing. [ 14 ] Recently, we reported a new highspeed spray-combustion synthesis (SCS) approach to MO fi lm growth, [ 7 ] producing high-density, macroscopically continuous fi lms for diverse MO semiconductors, and with carrier mobility and electrical uniformity rivaling that of magnetron-sputtered fi lms. However, low-voltage operation was only demonstrated for TFTs with a ZrO 2 dielectric, grown by sol-gel spin-coating and annealing at 500 °C. [ 15 ] Furthermore, thermally evaporated Metal oxides (MOs) are versatile materials that provide diverse electronic functionality ranging from insulators, to semiconductors, to conductors. Furthermore, MO fi lms have attracted great interest for the next-generation electronics due to their environmental/thermal stability, excellen...

Inhibition of α-glucosidase activity may suppress postprandial hyperglycemia. The inhibition kinetic analysis showed that apigenin reversibly inhibited α-glucosidase activity with an IC50 value of (10.5 ± 0.05) × 10(-6) mol L(-1), and the inhibition was in a noncompetitive manner through a monophasic kinetic process. The fluorescence quenching and conformational changes determined by fluorescence and circular dichroism were due to the formation of an α-glucosidase-apigenin complex, and the binding was mainly driven by hydrophobic interactions and hydrogen bonding. The molecular simulation showed that apigenin bound to a site close to the active site of α-glucosidase, which may induce the channel closure to prevent the access of substrate, eventually leading to the inhibition of α-glucosidase. Isobolographic analysis of the interaction between myricetin and apigenin or morin showed that both of them exhibited synergistic effects at low concentrations and tended to exhibit additive or antagonistic interaction at high concentrations.