2015
DOI: 10.1116/1.4914959
|View full text |Cite
|
Sign up to set email alerts
|

Arc plasma synthesized Si nanotubes: A promising low turn on field emission source

Abstract: Here, the authors report the field emission investigations of silicon nanotubes (SiNTs) synthesized by vapor phase condensation method in DC arc plasma reactor. The SiNTs have diameters in the range of 10–15 nm and length of a few 100 nm. A maximum current density of 4.2 mA/cm2 has been attained. The turn on field, defined for obtaining a current density of 10 μA/cm2, is found to be 1.9 V/μm. The specimen exhibits a good emission current stability at 1 μA over a period of 3 h. The field enhancement factor, β, … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
5

Relationship

1
4

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 35 publications
0
1
0
Order By: Relevance
“…Recently, we have been reported the enhance field emission behaviour of the GdB 6 ‐Cu 2 O and GdB 6 ‐ZnO heteroarchitecture assembly via facile synthesis route . Also the Silicon nanotubes coated on W‐tip was used as a field emitter, which showed quite high field enhancement factor . Furthermore, for a flat multi‐tip emitter and heteroarchitecture system where the assembly of a large number of nanostructures deposited in thin film form on suitable substrate are observed to be very reliable for to obtain the enhance FE characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, we have been reported the enhance field emission behaviour of the GdB 6 ‐Cu 2 O and GdB 6 ‐ZnO heteroarchitecture assembly via facile synthesis route . Also the Silicon nanotubes coated on W‐tip was used as a field emitter, which showed quite high field enhancement factor . Furthermore, for a flat multi‐tip emitter and heteroarchitecture system where the assembly of a large number of nanostructures deposited in thin film form on suitable substrate are observed to be very reliable for to obtain the enhance FE characteristics.…”
Section: Introductionmentioning
confidence: 99%