2009 10th International Symposium on Quality of Electronic Design 2009
DOI: 10.1109/isqed.2009.4810274
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Architecture design exploration of three-dimensional (3D) integrated DRAM

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Cited by 21 publications
(9 citation statements)
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“…Therefore, to access data in each frame simultaneously using the per-row DRAM-to-logic data delivery strategy, the 3D stacked DRAM has 2 Â 6= 12 banks and an aggregate data I/O width of 16 Â 8 Â 6 =768 bits (i.e., 768 TSVs). For DRAM performance modeling and energy estimation, we use the 3D DRAM design strategy presented in [7] that has been implemented based upon the widely used memory modeling tool CACTI [8]. All the DRAM modeling is carried out at the 65 nm technology node.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…Therefore, to access data in each frame simultaneously using the per-row DRAM-to-logic data delivery strategy, the 3D stacked DRAM has 2 Â 6= 12 banks and an aggregate data I/O width of 16 Â 8 Â 6 =768 bits (i.e., 768 TSVs). For DRAM performance modeling and energy estimation, we use the 3D DRAM design strategy presented in [7] that has been implemented based upon the widely used memory modeling tool CACTI [8]. All the DRAM modeling is carried out at the 65 nm technology node.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…Therefore, the overall system consists of B ranks grouped in vertical. All the banks in a 3D vertical rank share a single TSV bus, which can largely relax the TSV pitch constraints [13].…”
Section: D Memorymentioning
confidence: 99%
“…Therefore, the overall system is composed of N bank of vertical ranks. All the banks in a 3D vertical rank share a single TSV bus, which can largely relax the TSV pitch constraints [5].…”
Section: B 3d-dram Architecture Modelingmentioning
confidence: 99%