Arcing through a thick B/sub 4/C layer

Arcing defect was found afier passivation HDP film deposition. According to arcing defect cross-section analysis, passivation arcing occurrence shows a strong correlation with the metal exposed on the wafer. Metal exposed likes an electrode which will attract plasma to discharge on this positon and caused arcing problem. Therefore, there are two approachs to suppress passivation arcing occurrence. One is to avoid metal exposed as an electrode and the other is to avoid unstable plasma discharged on wafer. New nn-bias liner oxide recipe was implemented to solve passivation arcing problem. It's proposed to increase un-bias liner oxide thickness under zero bias setting and to add additional buffer step for bias power ramp up step after un-bias liner oxide deposition. The thicker un-bias liner oxide thickness can be isolated itom exposed metal to contact with HDP high energy plasma directly, so the plasma will not be discharged on the position. And add additional buffer step for bias power ramp up step can avoid bias power overshot. This can prevent unstable plasma discharged on the wafer. According to our experiment and tracing results, new un-bias liner recipe is very effective to suppress passivation arcing occurrence and without other side effect.

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Arcing through a thick B/sub 4/C layer

Cited by 4 publications

References 4 publications

Arcing at B4C-covered limiters exposed to a SOL-plasma

Arcing at B4C-covered limiters exposed to a SOL-plasma

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