Proceedings of the 2006 Conference on Asia South Pacific Design Automation - ASP-DAC '06 2006
DOI: 10.1145/1118299.1118361
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Area optimization for leakage reduction and thermal stability in nanometer scale technologies

Abstract: -Traditionally, minimum possible area of a VLSI layout is considered the best for delay and power minimization due to decreased interconnect capacitance. This paper shows however that the use of minimum area does not result in the minimum power and/or delay in nanometer scale technologies due to thermal effects, and in some cases, may result in thermal runaway. A methodology using area as a design parameter to reduce the leakage power, and prevent thermal runaway is presented. A 16-bit adder example in a 70nm … Show more

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Cited by 2 publications
(4 citation statements)
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“…As the feature size in nanometer-scale ICs continues to shrink, the increased power caused by the subthreshold current will contribute to higher temperature, which in turn further increases the circuit power and produces an uncontrolled positive feedback in the end. This process is called thermal runaway which will lead to a destructive thermal environment if not controlled [28]. A proper thermal solution to maintain temperature within its operating limits is significant for the system reliability of high-power processors.…”
Section: Thermal Modelmentioning
confidence: 99%
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“…As the feature size in nanometer-scale ICs continues to shrink, the increased power caused by the subthreshold current will contribute to higher temperature, which in turn further increases the circuit power and produces an uncontrolled positive feedback in the end. This process is called thermal runaway which will lead to a destructive thermal environment if not controlled [28]. A proper thermal solution to maintain temperature within its operating limits is significant for the system reliability of high-power processors.…”
Section: Thermal Modelmentioning
confidence: 99%
“…Reducing operation temperature for a proper thermal environment is indispensable to the system performance. Considering the system power and thermal resistance in the dissipated heat path, the junction temperature thermal profile model of die is given by [28] R j a c sys dT j dt + T j = R j a P(T j ) + T a (9) where c sys is the system thermal capacitance, R j a is the thermal resistance between the junction side and the ambient package, T j and T a are the junction temperature and ambient temperature, respectively, P(T j ) denotes temperaturedependent P total , which can be calculated by (1).…”
Section: Thermal Modelmentioning
confidence: 99%
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