Area‐Selective Atomic Layer Deposition of MoS<sub>2</sub> using Simultaneous Deposition and Etching Characteristics of MoCl<sub>5</sub>

Ahn, Wonsik; Lee, Hyangsook; Kim, Hoijoon; Leem, Mirine; Lee, Heesoo; Park, Taejin; Lee, Eunha; Kim, Hyoungsub

doi:10.1002/pssr.202000533

Cited by 10 publications

(9 citation statements)

References 39 publications

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“…An innovative approach proposed by Anh et al employs MoCl 5 and H 2 S precursors for selective ALD of MoS 2 . The mechanism for regioselective deposition is illustrated in Figure .…”

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

“…This technique also allows for selective growth on various transition-metal oxides and transition metal dichalcogenides (TMDs). Moreover, the promising outcomes of this study are expected to lay the groundwork for the regioselective ALD of other 2D materials.An innovative approach proposed by Anh et al83 employs MoCl 5 and H 2 S precursors for selective ALD of MoS 2 . The mechanism for regioselective deposition is illustrated in Figure14.…”

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confidence: 99%

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Atomic Layer Deposition of Transition-Metal Dichalcogenides

Li,

Zhao,

et al. 2024

Crystal Growth & Design

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transition metal sulfides (TMDs) semiconductors, represented by MoS 2 , are regarded as promising candidates to advance Moore's law in the postsilicon semiconductor era, as they possess the advantages of high carrier mobility, high switching ratios, tunable bandgap, and atomic-level thickness, as well as combining with good mechanical properties. The exploration of high-quality large-area 2D materials is crucial for investigating new physical phenomena and further extending their applications in microelectronics and optoelectronics. Among the techniques for producing high-quality 2D materials, atomic layer deposition (ALD) stands out as a self-limiting surface chemical reaction-based method. It offers more advantages in terms of step coverage, wafer size uniformity, and controllable stoichiometric ratio, which is expected to overcome the bottleneck in the utilization of 2D materials in optoelectronic integrated devices and future large-scale applications. In this paper, we provide an overview of the structure and properties of TMDs, and then focus on the latest progress in the ALD-based preparation of TMD thin films. Key factors influencing the film quality are discussed, and we conclude by discussing the potential future development trends in this field.

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“…An innovative approach proposed by Anh et al employs MoCl 5 and H 2 S precursors for selective ALD of MoS 2 . The mechanism for regioselective deposition is illustrated in Figure .…”

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

mentioning

confidence: 99%

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Li,

Zhao,

et al. 2024

Crystal Growth & Design

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“…An additional concern with the integration of 2D materials with CMOS technology is the difficulty in patterning the films, which will be critically damaged if exposed to plasma etching. A recent study by Ahn et al [ 198 ] showed that it was possible to simultaneously deposit and etch MoS 2 layers using MoCl 5 and H 2 S precursors at 400 °C. Essentially, the authors show a selective deposition process, whereby the Mo-precursor MoCl 5 would not adsorb onto the SiO 2 surface, while adsorbing onto the surface areas which were covered by aluminum, even after 400 ALD cycles, shown in Figure 15 .…”

Section: Fabrication and Working Principle Of 2d-material-based Gas S...mentioning

confidence: 99%

“… Schematic of the area-selective ALD process of MoS 2 showing the impact of the MoCl 5 pulse duration on the deposition of MoS 2 on different surfaces (SiO 2 and Al). (Reprinted with permission from Ahn et al [ 198 ]). …”

Section: Figurementioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

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“…A few works have been reported for addressing this challenge. For example, Ahn et al presented an atomic layer deposition (ALD) method to enable area-selective deposition of MoS 2 through using MoCl 5 to suppress the MoS 2 nucleation on undesired regions . Huang et al demonstrated CVD-based selective growth of Sb 2 Te 3 features by using SiO 2 shadow masks .…”

Section: Introductionmentioning

confidence: 99%

Bi₂Se₃-Based Memristive Devices for Neuromorphic Processing of Analogue Video Signals

Chen

Liang

2023

ACS Appl. Electron. Mater.

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Bismuth selenide (Bi 2 Se 3 ), a layered semiconductor, has attracted a great deal of attention as a thermoelectric material as well as a potential topological insulator. Here, we present a work showing that Bi 2 Se 3 can also be used for making memristive devices capable of directly processing analog video signals. In this work, Bi 2 Se 3 memristors are produced by multiplexing rubbing-induced site-selective growth, which potentially enables scalable implementation of such memristor arrays for constructing large-scale neuromorphic systems. The fabricated Bi 2 Se 3 memristors exhibit prominent memristive switching characteristics under the application of time-sequential voltage pulses. Especially, such a Bi 2 Se 3 memristor exhibits a reliable dependence of memristive responses on the duty cycle of programming pulses, fast recovery behavior from a dynamically modulated state, and a large drive current. These properties could be employed for extracting spatiotemporal information from analogue signals and realizing practical neuromorphic sensory functions. Our additional tests strongly imply that the memristive output of a Bi 2 Se 3 memristor in response to analogue video scanline signals could be implemented to construct future hardware-based computer vision systems capable of rapidly acquiring graphic information and directly actuating robotic systems with minimal data transmission and energy consumption. Finally, we attribute the observed memristive characteristics to field-mediated drift and diffusion of the selenium vacancies in the Bi 2 Se 3 layers. The simulated memristive response based on this hypothesis model is consistent with the experimental result. This work provides a potentially upscalable device solution to realize memristor-based neuromorphic sensory or edge computing systems.

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Area‐Selective Atomic Layer Deposition of MoS₂ using Simultaneous Deposition and Etching Characteristics of MoCl₅

Cited by 10 publications

References 39 publications

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Bi₂Se₃-Based Memristive Devices for Neuromorphic Processing of Analogue Video Signals

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Area‐Selective Atomic Layer Deposition of MoS2 using Simultaneous Deposition and Etching Characteristics of MoCl5

Cited by 10 publications

References 39 publications

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Bi2Se3-Based Memristive Devices for Neuromorphic Processing of Analogue Video Signals

Contact Info

Product

Resources

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Area‐Selective Atomic Layer Deposition of MoS₂ using Simultaneous Deposition and Etching Characteristics of MoCl₅

Bi₂Se₃-Based Memristive Devices for Neuromorphic Processing of Analogue Video Signals