Plasmons describe collective oscillations of electrons. They have a fundamental role in the dynamic responses of electron systems and form the basis of research into optical metamaterials. Plasmons of two-dimensional massless electrons, as present in graphene, show unusual behaviour that enables new tunable plasmonic metamaterials and, potentially, optoelectronic applications in the terahertz frequency range. Here we explore plasmon excitations in engineered graphene micro-ribbon arrays. We demonstrate that graphene plasmon resonances can be tuned over a broad terahertz frequency range by changing micro-ribbon width and in situ electrostatic doping. The ribbon width and carrier doping dependences of graphene plasmon frequency demonstrate power-law behaviour characteristic of two-dimensional massless Dirac electrons. The plasmon resonances have remarkably large oscillator strengths, resulting in prominent room-temperature optical absorption peaks. In comparison, plasmon absorption in a conventional two-dimensional electron gas was observed only at 4.2 K (refs 13, 14). The results represent a first look at light-plasmon coupling in graphene and point to potential graphene-based terahertz metamaterials.

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O rganic-based photovoltaic cells (OPVs) are of great interest owing to their potential for low-cost solar energy conversion. 1 An important breakthrough for OPVs was the use of a heterojunction (HJ) structure, in which the difference of the energy levels of two materials (donor and acceptor) can lead to efficient dissociation of photogenerated excitons at the HJ interfaces. 1 Since then, tremendous efforts have been taken to optimize the carrier donor/acceptor (DA) interface morphology to improve the photogenerated exciton dissociation and consequently the overall power conversion efficiency. 2 One successful approach is to use a bulk heterojunction (BHJ) structure that can create dissociation centers everywhere within the active layer. 2 Typically, the formation of a BHJ structure can be achieved via self-assembly of nanostructured soft materials by spontaneous phase separation in a number of solution processed polymer/ fullerene systems, yet efficiency in these structures might be significantly reduced through unpredicted shunt paths and isolated islands of materials. 3 Nanoimprint lithography (NIL) offers a potential solution for producing well-defined interpenetrating networks at the DA interface and is compatible with roll-to-roll manufacturing for lowcost and high-throughput nanopatterning. 4,5 To efficiently harvest photogenerated excitons, densely packed nanoimprinted OPV structures with halfpitch smaller than 2 times that of the exciton diffusion length are needed (typically sub-20 nm regime). 6 Recent efforts in this field have been mainly focusing on polymeric PV materials. However, OPVs with small-molecular weight materials could also benefit from similar morphologies. In addition, small-molecular weight OPV materials provide additional advantages over polymers, such as higher chemical/thermal stability and higher material purity. 7 Previous work has shown relatively poor stability of imprinted nanostructures in smallmolecular compounds. 8Ϫ10 Problems arise due to pronounced surface diffusion and self-faceting and are exacerbated when features head toward the sub-20 nm regime. 11,12 These instabilities must be understood and overcome to achieve efficient nanostructured OPVs.Boron subphthalocyanines (SubPcs) are a class of photoactive small-molecularweight materials with unique physical properties. 13 A typical SubPc has a nonplanar pyramid-shaped structure, in which the boron atom is surrounded by three coupled

Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

Memristors based on 2D layered materials could provide biorealistic ionic interactions and potentially enable construction of energy-efficient artificial neural networks capable of faithfully emulating neuronal interconnections in human brains. To build reliable 2D-material-based memristors suitable for constructing working neural networks, the memristive switching mechanisms in such memristors need to be systematically analyzed. Here, we present a study on the switching characteristics of the few-layer MoS memristors made by mechanical printing. First, two types of dc-programmed switching characteristics, termed rectification-mediated and conductance-mediated behaviors, are observed among different MoS memristors, which are attributed to the modulation of MoS/metal Schottky barriers and redistribution of vacancies, respectively. We also found that an as-fabricated MoS memristor initially exhibits an analog pulse-programmed switching behavior, but it can be converted to a quasi-binary memristor with an abrupt switching behavior through an electrical stress process. Such a transition of switching characteristics is attributed to field-induced agglomeration of vacancies at MoS/metal interfaces. The additional Kelvin probe force microscopy, Auger electron spectroscopy analysis, and electronic characterization results support this hypothesis. Finally, we fabricated a testing device consisting of two adjacent MoS memristors and demonstrated that these two memristors can be ionically coupled to each other. This device interconnection scheme could be exploited to build neural networks for emulating ionic interactions among neurons. This work advances the device physics for understanding the memristive properties of 2D-material-based memristors and serves as a critical foundation for building biorealistic neuromorphic computing systems based on such memristors.