Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Abstract

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO<sub>2</sub> surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO<sub>2</sub> surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

Area Selective Deposition of Metal Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

“…Such configuration recently allowed us to achieve ASD by utilizing the resistivity of the substrate. 21 In this work, we present an inexpensive and straightforward approach to achieve ASD of iron films using the polymers polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), and polystyrene (PS) to mask areas on the substrate where film growth is undesired. The mentioned polymers are very common, produced in large volumes and are available at low cost.…”