Area selective growth of GaAs by migration‐enhanced epitaxy

Abstract

PACS 81.05. Ea, 81.15.Hi Application of migration-enhanced deposition sequence to area selective growth of GaAs and other III -V compound semiconductors makes it possible to achieve well-defined area selective growth even using solid source molecular beam epitaxy. Successful growth of small disks and other structures has been performed on SiO 2 masked (111)A and (111)B substrates at temperatures around 590 °C. General rule for facets formation suggests that the facet angle is quite sensitive to the V/III flax ratio as well as the substrate orientation. To create vertical {110} facets around the structures at relatively low V/III flux ratios, (111)A substrates is much more preferable to (111)B substrate. However, high density of hillocks emerges on the structures grown on (111)A substrate. It is found that the hillocks are caused by the stacking faults. The density of hillocks has been dramatically reduced by depositing As in the Ga deposition period.

Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces

“…The (111) surface morphology, in most of the cases, is still affected by a large surface roughness. In particular, the growth of highly flat GaAs and AlGaAs (111)A surfaces, and consequently of high quality nanostructures grown on this substrate, is strongly subordinated to the possibility of inhibiting the formation of large (with µm lateral dimensions) pyramidal hillocks with threefold symmetry, nucleated by stacking faults 18,19 .…”

Structural properties of InAs‐based nanostructures grown on GaAs(001) and GaAs(111)A by area selective epitaxy

“…Therefore, we also studied the ASE growth of InAs on SiO 2 patterned GaAs(111)A substrates. Figure 3(a) shows a top-view micrograph of InAs/GaAs(111)A structures [5]. In general for InAs/GaAs(111)A growth, stronger lateral overgrowth over the SiO 2 mask was observed compared to the InAs/GaAs(001) ASE growth.…”

“…Area selective epitaxy (ASE) is an inherently "damage-free" method, and combines the advantages of the bottom-up and top-down approaches. Migration enhanced epitaxy (MEE) [1,2] based on the alternate deposition of constituent elements has proved useful for area selective growth of GaAs compound semiconductors by using solid source molecular beam epitaxy (MBE) [3][4][5]. To date, there have been only few attempts for the ASE growth by MBE of other III-V materials such as InP, InAs and AlAs [6][7][8].…”

Area selective epitaxy of InAs on GaAs(0 0 1) and GaAs(1 1 1)A by migration enhanced epitaxy

“…In case of the open areas with diameters of d¼ 340-430 nm it is likely that a single In droplet is formed in the InAs layers with some triangular hillocks were formed. These hillocks were probably caused by stacking faults [7]. In case of the #REF grown InAs/GaAs(1 1 1)A ( Fig.…”

“…Well-defined area selective growth of low dimensional structures has already been reported using metalorganic vapor phase epitaxy (MOVPE) [1,2]. Migration enhanced epitaxy (MEE) [3,4] based on the alternate deposition of constituent elements has proved useful for area selective growth of GaAs compound semiconductors by using solid source molecular beam epitaxy (MBE) [5][6][7]. To date, there have been only few attempts for the ASE growth by MBE of other III-V materials such as InP, InAs and AlAs [8][9][10].…”