Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

Kee, Sang; Yeo, Deok Ho; Yoon, Hyung Hun; Kim, Sung June

doi:10.1109/2944.720471

Cited by 62 publications

(6 citation statements)

References 21 publications

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“…One technique that can be used to achieve integration is the post-growth quantum well intermixing (QWI) technique where the band gap is selectively modified by intermixing of the group III/V atoms between the quantum well and barrier region [3][4][5]. There are several methods commonly used to generate the wellbarrier intermixing such as impurity-induced disordering [6], impurity-free vacancy disordering (IFVD) [7,8] and ion irradiation-induced intermixing [9][10][11]. Among these various techniques, intermixing by ion irradiation with subsequent thermal annealing has been shown to be very effective due to its advantage of precise control of defects generation to induce intermixing by varying the irradiation conditions.…”

Section: Introductionmentioning

confidence: 99%

Proton irradiation-induced intermixing in In_xGa_1−xAs/InP quantum wells—the effect of In composition

Gareso¹,

Buda²,

Fu³

et al. 2006

Semicond. Sci. Technol.

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We have investigated atomic intermixing in In x Ga 1−x As/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.

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Section: Introductionmentioning

confidence: 99%

Proton irradiation-induced intermixing in In_xGa_1−xAs/InP quantum wells—the effect of In composition

Gareso¹,

Buda²,

Fu³

et al. 2006

Semicond. Sci. Technol.

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“…InAlGaAs MQW, InGaAs/InP MQW, and InGaAsP MQW structures usually have InP as the cladding layers ending with a thin top InGaAs contact layer. According to several group V interstitial interdiffusion models [9,[12][13][14][15], capping these layers with SiO 2 film induces predominantly group V interstitial diffusion during the RTA. This is most likely due to the out-diffusion of group III atoms (Ga and In) into the SiO 2 layer, leaving a substantial number of group V atoms in non-equilibrium positions in the lattice.…”

Section: Intermixing Characteristicsmentioning

confidence: 99%

“…is the diffusion length of atom i, D i is the diffusion coefficient of atom i, and t is the annealing time) [12,14]. As a result, a SiO 2 cap is very effective for the intermixing of InGaAs/InP MQW and InGaAsP MQW.…”

Section: Intermixing Characteristicsmentioning

confidence: 99%

Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode

Alahmadi

LiKamWa

2019

Semicond. Sci. Technol.

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In this work, we report on laser diodes with intermixed InAlGaAs multi-quantum well (MQW) as the active gain medium. Using an impurity-free vacancy-enhanced disordering technique, several silicon nitride-capped InAlGaAs MQW samples are intermixed to different levels by varying the rapid-annealing temperatures from 730 °C to 830 °C. The intermixed laser diodes operate at wavelengths spanning from 1520 nm to 1400 nm, while exhibiting an increase in threshold current from 25 mA (as-grown) to 45 mA, and a decrease in slope efficiency from 0.101 W A −1 (as-grown) to 0.068 W A −1 as the intermixing extent is increased. For a sample that was annealed at 770 °C while only covered with a silicon dioxide film, the lasing wavelength is 1543 nm compared to 1550 nm for the as-grown laser wavelength, and the lasing threshold current is 26 mA with a slope efficiency of 0.08 W A −1 .

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“…In order to accommodate these different functionalities on the same wafer it is imperative to locally modify the bandgap energies of the quantum wells 30 – 35 . More specifically, the SOA sections are expected to operate at a smaller bandgap than the other two regions to obtain appreciable optical amplification while at the same time the energy gap in the passive waveguide channels must be substantially larger to minimize transmission losses.…”

Section: Introductionmentioning

confidence: 99%

Integrated multi-port circulators for unidirectional optical information transport

Aleahmad

Khajavikhan

Christodoulides

et al. 2017

Sci Rep

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On-chip photonic networks hold great promise for enabling next-generation high speed computation and communication systems. It is currently envisioned that future integrated photonic networks will be capable of processing dense digital information on a single monolithic platform by involving a multitude of optical components ranging from lasers to modulators, to routers, interconnects and detectors. Among the possible functionalities to be incorporated in such arrangements is the ability to route information in a unidirectional way among N-ports - a capability typically afforded through the use of optical circulators. Yet, in many settings, what is basically needed is re-routing information in a unidirectional fashion without necessarily invoking optical isolation. Of interest would be to devise strategies through which miniaturized optical devices can be monolithically fabricated on light-emitting semiconductors by solely relying on physical properties that are indigenous to the material itself. By exploiting the interplay between non-Hermiticity and nonlinearity, here we demonstrate a new class of chip-scale information transport devices on spatially modified III-V quantum well systems. These unidirectional structures are broadband (over 2.5 THz) at 1550 nm, effectively loss-free, color-preserving, and in proof-of-principle demonstrations have provided 23 dB isolation when used under pulsed-mode conditions at milliwatt (mW) power levels.

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Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

Cited by 62 publications

References 21 publications

Proton irradiation-induced intermixing in In_xGa_1−xAs/InP quantum wells—the effect of In composition

Proton irradiation-induced intermixing in In_xGa_1−xAs/InP quantum wells—the effect of In composition

Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode

Integrated multi-port circulators for unidirectional optical information transport

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Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion

Cited by 62 publications

References 21 publications

Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition

Proton irradiation-induced intermixing in InxGa1−xAs/InP quantum wells—the effect of In composition

Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode

Integrated multi-port circulators for unidirectional optical information transport

Contact Info

Product

Resources

About

Proton irradiation-induced intermixing in In_xGa_1−xAs/InP quantum wells—the effect of In composition

Proton irradiation-induced intermixing in In_xGa_1−xAs/InP quantum wells—the effect of In composition