1991
DOI: 10.1103/physrevb.44.9265
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ArF-excimer-laser-induced emission and absorption bands in fused silica synthesized in reducing conditions

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Cited by 34 publications
(16 citation statements)
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“…This remarkably contrasts with several experimental evidence (including those of Fig. 1 in the present paper) in favor of reaction (1) taking place only from left to right at temperatures N200 K [6,7,[20][21][22][23][24][25], although requiring an activation energy of ∼0.4 eV which provides the main bottleneck limiting the reaction rate [25].…”
Section: Discussioncontrasting
confidence: 83%
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“…This remarkably contrasts with several experimental evidence (including those of Fig. 1 in the present paper) in favor of reaction (1) taking place only from left to right at temperatures N200 K [6,7,[20][21][22][23][24][25], although requiring an activation energy of ∼0.4 eV which provides the main bottleneck limiting the reaction rate [25].…”
Section: Discussioncontrasting
confidence: 83%
“…Post-irradiation decay of E′ centers on a time scale of a few hours has been previously interpreted as a consequence of its chemical reaction with diffusing H 2 [6,7,[20][21][22][23][24][25]:…”
Section: Discussionmentioning
confidence: 99%
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“…For example, for light-induced modification of fused silica under femtosecond irradiation, the value of the constant ν 0 is more than 10 4 pulses [6,28]. Such a big difference implies that the chemical bonds are perturbed by laser light much more strongly in the case of bismuth-doped glass.…”
Section: Formation Of Radiative Defectsmentioning
confidence: 95%
“…An urgent problem here is defects creation by UV light irradiation, which brings extra absorption bands and then lowers transmittance in UV region. [4][5][6][7] Commercial bulk silica glass and silica fiber for UV light usually contain OH ions of 300-1200 wt ppm, which suppress to some extent the photoinduced defects creation. [8][9][10][11] The OH ions have been thought to stabilize the glass network by forming stable terminated bonds as Si-O-H from weak Si-O-Si bonds or various pre-existing defects.…”
Section: Introductionmentioning
confidence: 99%