ArF laser induced CVD of SiO2 films: a search for the best suitable precursors

Rieger, David; Bachmann, Friedrich

doi:10.1016/0169-4332(92)90026-t

Cited by 14 publications

(1 citation statement)

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“…Many studies on the deposition of silicon dioxide from TEOS, therefore, have been performed using thermal-, 7-1~ plasma -1524 and photo-CVD. [25][26][27] In our method, a spin-coated organic film which contains TEOS is irradiated by the UV light from a low pressure mercury lamp to generate silicon oxide. The major advantage of this method is that oxide film formation can be accomplished at low temperatures, i.e., below 100~ and moreover, neither a specialized reaction chamber nor a gas doser system is necessary.…”

Section: -~mentioning

confidence: 99%

Ultraviolet‐Induced Deposition of SiO2 Film from Tetraethoxysilane Spin‐Coated on Si

Niwano

Kinashi

Saito

et al. 1994

J. Electrochem. Soc.

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We have previously proposed a method for depositing silicon dioxide films on Si from tetraethoxysilane Si(OC2H~)4 (TEOS) using ultraviolet (UV) light from a low pressure mercury lamp. In the method, an organic solution which contains TEOS is spin-coated onto a Si wafer surface to form a thin organic film which is then exposed to the UV light to synthesize silicon dioxide. The photochemical reactions responsible for the oxide formation and the thermal properties of deposited films have been investigated using infrared (IR) and UV absorption spectroscopy and thermal desorption spectroscopy (TDS). IR and UV absorption data confirm that the UV light decomposes organic compounds in the spin-coated organic film to conve~'t the film into a silicon dioxide film. We show that some photochemical reactions responsible for the decomposition of organic compounds are two-step processes. TDS data demonstrate that the deposited film is stable from substrate heating to approximately 400~

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Section: -~mentioning

confidence: 99%