Argon cluster impacts on layered silicon, silica, and graphite surfaces

Samela, Juha; Nordlund, K.; Keinonen, J.; Popok, Vladimír; Campbell, Eleanor E. B.

doi:10.1140/epjd/e2007-00104-y

Cited by 26 publications

(14 citation statements)

References 18 publications

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“…This effect is especially essential for the case of small clusters even if the implantation energy is relatively high, for example for 555 eV/atom Ta n ͑n =4,9͒, 500 eV/atom Ar 12 , and 100 eV/atom Au 13 clusters. [57][58][59] Our current MD simulations also show that no clear craters are formed. Instead, there is an amorphous region that contains Co atoms and small voids ͑Fig.…”

Section: A Implantation and Pinning Of Clustersmentioning

confidence: 55%

Stopping of energetic cobalt clusters and formation of radiation damage in graphite

et al. 2009

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The interaction of energetic ͑up to 200 eV/atom͒ size-selected Co n clusters with HOPG is studied both experimentally and theoretically. Etching of the radiation damaged areas introduced by cluster impacts provides a measure of the depth to which the collision cascades are developed and allows a comparison of these data with the molecular dynamics simulations. Good agreement between the experimental results and modeling is obtained. It is shown that the projected range of the cluster constituents can be linearly scaled with the projected momentum ͑the cluster momentum divided by surface impact area͒. With decrease in cluster energies to ca. 10 eV/atom the transition from implantation to pinning is suggested. It is found that even after quite energetic impacts residual clusters remain intact in the shallow graphite layer. These clusters can catalyze reaction of atmospheric oxygen with damaged graphite areas under the thermal heating that leads to the formation of narrow ͑5-15 nm͒ random in shape surface channels ͑trenches͒ in the top few graphene layers. Thus, small imbedded Co nanoparticles can be used as a processing tool for graphene.

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Section: A Implantation and Pinning Of Clustersmentioning

confidence: 55%

Stopping of energetic cobalt clusters and formation of radiation damage in graphite

et al. 2009

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“…For the case of Kr + , As + and Ge + ions implanted into PbS and Si, the crater diameter was found to increase from 7 to 28 nm when the energy was increased from 20 to 200 keV [269]. However, with further energy increase up to 500 keV the crater diameter and the ratio of craters per impact decreased: Craters are also often found in energetic cluster-surface collisions both in experiments [273,274,275,276,277,278] and in MD simulations [88,89,279,280,281,282,283,284].…”

Section: Crater and Hillock Formationmentioning

confidence: 99%

Cluster–surface interaction: From soft landing to implantation

Popok

Barke

Campbell

et al. 2011

Surface Science Reports

245

197

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The current paper presents a state-of-the-art review in the field of interaction of atomic and molecular clusters with solids. We do not attempt to overview the entire broad field, but rather concentrate on the impact phenomena: how the physics of the cluster-surface interaction depends on the kinetic energy and what effects are induced under different energetic regimes. The review starts with an introduction to the field and a short history of cluster beam development. Then fundamental physical aspects of cluster formation and the most common methods for the production of cluster beams are overviewed. For cluster-surface interactions, one of the important scenarios is the low-energy regime where the kinetic energy per atom of the accelerated cluster stays well below the binding (cohesive) energy of the cluster constituents. This case is often called This is the peer-reviewed author's version of a work that was accepted for publication in Surface Science Reports. Changes resulting from the publishing process, such as editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version

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“…Unfortunately, all of the three mentioned potentials have been shown to underestimate T d as compared to density-functional theory calculations. 37 given by EDIP has been shown to give the closest match with experiment for Ar ions with energies up to 20 keV, 38 whereas SW and TS agree well with each other but somewhat underestimate the experimental results. Thus, as SW gives the best value for T d , whereas EDIP describes sputtering in best accordance with experiments, we started our simulations using EDIP and SW in parallel.…”

Section: Appendix C: Simulation Methodsmentioning

confidence: 68%

Atomic-scale effects behind structural instabilities in Si lamellae during ion beam thinning

et al. 2012

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The rise of nanotechnology has created an ever-increasing need to probe structures on the atomic scale, to which transmission electron microscopy has largely been the answer. Currently, the only way to efficiently thin arbitrary bulk samples into thin lamellae in preparation for this technique is to use a focused ion beam (FIB). Unfortunately, the established FIB thinning method is limited to producing samples of thickness above ∼20 nm. Using atomistic simulations alongside experiments, we show that this is due to effects from finite ion beam sharpness at low milling energies combined with atomic-scale effects at high energies which lead to shrinkage of the lamella. Specifically, we show that attaining thickness below 26 nm using a milling energy of 30 keV is fundamentally prevented by atomistic effects at the top edge of the lamella. Our results also explain the success of a recently proposed alternative FIB thinning method, which is free of the limitations of the conventional approach due to the absence of these physical processes

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Argon cluster impacts on layered silicon, silica, and graphite surfaces

Cited by 26 publications

References 18 publications

Stopping of energetic cobalt clusters and formation of radiation damage in graphite

Stopping of energetic cobalt clusters and formation of radiation damage in graphite

Cluster–surface interaction: From soft landing to implantation

Atomic-scale effects behind structural instabilities in Si lamellae during ion beam thinning

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