Atomic-scale effects behind structural instabilities in Si lamellae during ion beam thinning

Holmström, Eero; Kotakoski, Jani; Lechner, Lorenz; Kaiser, Ute; Nordlund, K.

doi:10.1063/1.3698411

Cited by 9 publications

(14 citation statements)

References 43 publications

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“…11 More often reported, though, are the deleterious effects of Ga implantation. 10,15 For the FIB CE community, Ga implantation has the potential of adding measurable sheet conductivity to dielectric layers, thereby creating conductive shorts between metal lines and active devices. 10,15 For the FIB CE community, Ga implantation has the potential of adding measurable sheet conductivity to dielectric layers, thereby creating conductive shorts between metal lines and active devices.…”

Section: Introductionmentioning

confidence: 99%

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

Niles

Spicer

Kee

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Formation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized statesMaskless sub-μ m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching J.The authors use electron spectroscopy for chemical analysis to study the implantation of 50 keV Ga þ ions into electronic grade silicon, silicon oxide, silicon nitride, and silicon oxynitride typical of focused ion beam circuit editing work. The Ga þ dose naturally splits into low dose and high dose regimes with a transitional, median regime between the two. In the low dose regime (<10 16 cm À2 ), the amount of milled material is small ($10 nm) relative to typical layer thicknesses of circuits. A Gaussian implanting model with an implanting yield of $0.6 6 0.1, range of 43 6 9 nm, and straggle of 15 6 5 nm describe the data for all studied materials. The Ga atoms bind to the oxygen and nitrogen anions for oxides and nitrides, and silicon for elemental silicon. In the median regime (10 16 -10 17 cm À2 ), Ga accumulation and substrate defect formation alter a simple Gaussian model for Ga implantation although a steady state condition has not yet been reached. The high dose regime (>10 17 cm À2 ) entails a steady state condition where the implanted Ga assumes an error-function profile comprising a surface concentration as high as 50 at. % and a penetration depth of $60 nm. In the high dose regime, Ga implanted into nitride and oxide displays metallic valence (Ga 0 ) on the surface, gradually transitioning to nitride and oxide valence (Ga 3þ ) with depth.

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Section: Introductionmentioning

confidence: 99%

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

Niles

Spicer

Kee

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…3 µm in depth. We have no evidence of a formation of an amorphous phase near the surface of the sample as observed for instance in TEM specimens prepared by a focused ion beam [14,15], even if it is not possible to exclude the local formation of an amorphous layer a few nanometers thick during surface damage treatment.…”

Section: Tem Analysismentioning

confidence: 93%

A Study of Extended Defects in Surface Damaged Crystals

2018

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Abstract:We have analyzed by transmission electron microscopy silicon and GaAs crystals polished with sandpapers of different grain size. The surface damage induced a crystal permanent convex curvature with a radius of the order of a few meters. The curvature is due to a compressive strain generated in the damaged zone of the sample. Contrary to what was reported in the literature, the only defects detected by transmission electron microscopy were dislocations penetrating a few microns from the surface. Assuming the surface damage as a kind of continuous indentation, a simple model able to explain the observed compressive strain is given.

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“…Most of the previous work on FIB induced damage in silicon used slab-like samples (corresponding to an infinitely extended surface) to study the influence of the beam incidence angle and the ion dose [13,15,24,25,26] on the sputter process and the resulting damage. Only few studies considered other sample geometries, like lamella [27].…”

Section: Sample Geometrymentioning

confidence: 99%

“…During a collision cascade, some Si atoms, particularly the primary knock-on atoms (PKA), will have a very high energy. To represent such Si-Si interaction at high energies, the SW m potential is smoothly merged to the ZBL potential for short inter-atomic distances [27]. The two potentials are merged over a distance between 1.7 -2.0Å; the details of the joining procedure are described in [33].…”

Section: Interatomic Potentialsmentioning

confidence: 99%

Atomistic simulations of focused ion beam machining of strained silicon

Guénolé

Prakash

Bitzek

2017

Applied Surface Science

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The focused ion beam (FIB) technique has established itself as an indispensable tool in the material science community, both to analyze samples and to prepare specimens by FIB milling. In combination with digital image correlation (DIC), FIB milling can, furthermore, be used to evaluate intrinsic stresses by monitoring the strain release during milling. The irradiation damage introduced by such milling, however, results in a change in the stress/strain state and elastic properties of the material; the change in the strain state in turn affects the bonding strength, and is hence expected to implicitly influence irradiation damage formation and sputtering. To elucidate this complex interplay between strain, irradiation damage and sputtering, we perform TRIM calculations and molecular dynamics simulations on silicon irradiated by Ga + ions, with a slab and trench-like geometry, whilst simultaneously applying uniaxial tensile and compressive strains up to 4%. In addition we calculate the threshold displacement energy (TDE) and the surface binding energy (SBE) for various strain states. The sputter rate and amount of damage produced in the MD simulations shows a clear influence of the strain state. The SBE shows no significant dependence on strain, but is strongly affected by surface reconstructions. The TDE shows a clear strain-dependence, which however, cannot explain the influence of strain on the extent of the induced irradiation damage or the sputter rate.

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Atomic-scale effects behind structural instabilities in Si lamellae during ion beam thinning

Cited by 9 publications

References 43 publications

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

Using electron spectroscopy to verify the model of Ga implanted during focused ion beam circuit editing

A Study of Extended Defects in Surface Damaged Crystals

Atomistic simulations of focused ion beam machining of strained silicon

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