Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer

Wierzbicka, Aleksandra; Tchutchulashvili, G.; Sobanska, M.; Kłosek, K.; Minikayev, R.; Domagała, J. Z.; Borysiuk, J.; Żytkiewicz, Z. R.

doi:10.1016/j.apsusc.2017.07.075

Cited by 14 publications

(9 citation statements)

References 41 publications

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“…As a result, the concentration of ZB-GaN pyramids should be significantly reduced. This was indeed observed, together with a corresponding reduction in the number of Ga-polar NWs [56].…”

Section: Resultssupporting

confidence: 55%

“…Apparently, it did not sufficiently protect the freshly etched substrate during its transfer to the UHV system and some islands of oxide were formed, which induced the growth of Ga-polar GaN NWs by the mechanism reported earlier [19]. Such conclusion is strongly supported by previous studies showing that the mixed polarity of GaN NWs on HF-treated Si can be eliminated by additional Ga-triggered deoxidation of the substrate performed just before its nitridation inside the growth chamber [56].…”

Section: Discussionmentioning

confidence: 55%

“…The hypothesis that on the HF-treated Si substrate the islands of residual oxide were responsible for inducing Ga-polar growth of GaN NWs is strongly supported by results of recent X-ray diffraction measurements [56]. Due to the high intensity of the synchrotron radiation beam used and the application of grazing incidence geometry, the presence of tiny ZB-GaN pyramids that are the seeds for Ga-polar NWs could be detected on the HF-treated Si(001) substrate.…”

Section: Resultsmentioning

confidence: 81%

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Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

et al. 2020

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The growth of GaN nanowires having a polar, wurtzite structure on nonpolar Si substrates raises the issue of GaN nanowire polarity. Depending on the growth procedure, coexistence of nanowires with different polarities inside one ensemble has been reported. Since polarity affects the optical and electronic properties of nanowires, reliable methods for its control are needed. In this work, we use Kelvin probe force microscopy to assess the polarity of GaN nanowires grown by plasma-assisted Molecular Beam Epitaxy on Si(111) substrates. We show that uniformity of the polarity of GaN nanowires critically depends on substrate processing prior to the growth. Nearly 18% of nanowires with reversed polarity (i.e., Ga-polar) were found on the HF-etched substrates with hydrogen surface passivation. Alternative Si substrate treatment steps (RCA etching, Ga-triggered deoxidation) were tested. However, the best results, i.e., purely N-polar ensemble of nanowires, were obtained on Si wafers thermally deoxidized in the growth chamber at ~1000 °C. Interestingly, no mixed polarity was found for GaN nanowires grown under similar conditions on Si(111) substrates with a thin AlOy buffer layer. Our results show that reversal of nanowires’ polarity can be prevented by growing them on a chemically uniform substrate surface, in our case on clean, in situ formed SiNx or ex situ deposited AlOy buffers.

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“…As a result, the concentration of ZB-GaN pyramids should be significantly reduced. This was indeed observed, together with a corresponding reduction in the number of Ga-polar NWs [56].…”

Section: Resultssupporting

confidence: 55%

Section: Discussionmentioning

confidence: 55%

Section: Resultsmentioning

confidence: 81%

See 1 more Smart Citation

Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

et al. 2020

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“…However, one-dimensional nanomaterials have more unique electronic and optical properties, which are more conducive to improve the performance of the ultraviolet detector. There are various methods to grow GaN nanowires(NWs), including metal-organic chemical vapor deposition (MOCVD) [7,8], molecular beam epitaxy (MBE) [9][10][11][12][13], and chemical vapor deposition (CVD) [14][15][16][17][18][19][20][21][22][23]. Among these methods, CVD is the most effective method to synthesize nanowires.…”

Section: Introductionmentioning

confidence: 99%

Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

Ding

Meng

2020

Rev. Mex. Fís.

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Serrated GaN nanowires were synthesized on sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An UV detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has different response under different wavelength light illumination and has the maximum response under 365nm ultraviolet light. Photocurrent–time characteristics show the detector has good stability over time.

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“…Because of the high impingement angle, which facilitates the surface kinetics, they also support higher doping levels . The built-in tilted orientation of inclined NWs is also advantageous for enhancing optical processes, such as an increased photoluminescence efficiency. − Cathodoluminescence measurements proved that the luminescence intensity from inclined GaN NWs is much higher than that from their vertical neighbors. , Tilted GaAs NWs grown on a (001) substrate were recently used to provide a larger cross section for terahertz measurements . Moreover, inclined NWs have been used for solar cell devices , as well as for biological sensing .…”

mentioning

confidence: 99%

Au-Assisted Substrate-Faceting for Inclined Nanowire Growth

et al. 2018

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We study the role of gold droplets in the initial stage of nanowire growth via the vapor-liquid-solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted {111}B side walls. Only once these facets become sufficiently large and regular, the gold droplets start nucleating and guiding the growth of nanowires. We show that this dual role of the gold droplets can be detected and monitored by high-energy electron diffraction during growth. Moreover, gold-induced formation of craters and the onset of nanowires growth on the {111}B facets inside the craters are confirmed by the results of Monte Carlo simulations. The detailed insight into the growth mechanism of inclined nanowires will help to engineer new and complex nanowire-based device architectures.

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Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer

Cited by 14 publications

References 41 publications

Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

Au-Assisted Substrate-Faceting for Inclined Nanowire Growth

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