Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets

Möser, Andreas; Latta, E.E.

doi:10.1063/1.350628

Cited by 73 publications

(31 citation statements)

References 22 publications

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“…The facet temperature approaches T crit . Experimentally determined values are T crit = 120-140°C [11,17,19,28], 150°C [29] and 160°C [30]. This phase ends when the thermal runaway starts in a small area of a facet or in the bulk.…”

Section: Cod and Thermal Runawaymentioning

confidence: 99%

“…In particular, the research on diode laser facets for single-mode lasers at IBM is well documented [11,17,19,20,29,[34][35][36][37][38][39][40]. After having identified the root cause of COD in lasers with as-cleaved (uncoated) facets as a temperature-activated surface-chemical reaction, several surface passivation technologies [36,[41][42][43] have been successfully developed in order to shift P COD -values towards higher emission powers.…”

Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Cod and Thermal Runawaymentioning

confidence: 99%

Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…This mainly generates heat at the AR facet, which increases the surrounding temperature [25]. In addition, the temperature increase around the AR facet increases in the current density around the AR facet.…”

Section: Mechanism Of Facet-vicinity Degradationmentioning

confidence: 97%

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Takeshita

2012

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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By employing the optical-beam-induced current (OBIC) measurement technique, we have analyzed the sudden and wear-out failure of optical devices. The extent of the degraded region is estimated by using relative OBIC intensity prior to aging. The use of OBIC incident sources at several wavelengths enables us to detect degradation in facets, epitaxial layers, and the device interior. IntroductionOptical-beam-induced current (OBIC) measurement [1][2][3][4], as well as other approaches such as electron-beam-induced current (EBIC) measurement [5] and luminescence measurement [6], can determine the existence of deterioration in optical and electronic devices. Of these approaches, the OBIC technique has the advantages of being nondestructive and capable of selecting wavelengths [7].First, since the OBIC is measured through the window of a transistor outline (TO) can before and after aging, we are able to detect an OBIC change for several periods of aging. When there are nonradiative recombination centers in the degraded region, the OBIC intensity decreases as the recombination density increases [8]. The relative OBIC intensity prior to aging is useful for analyzing the degree of device degradation. Furthermore, the incident light that illuminates the facet is absorbed in the semiconductor. However, the lights incident on the top surface rather than the facet are absorbed in the layer to a depth of not more than a few micrometer. The OBIC measurement technique that involves illuminating the facet is therefore expected to be highly susceptible to degradation.

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“…But standard broad-area waveguide designs are susceptible to modal instabilities, filamentation, and COMD failure [27]. This results in low beam qualities and value for the brightness is limited to around 1 Â 10 7 Wcm À2 sr À1 [28].…”

Section: Tapered Lateral Structurementioning

confidence: 99%

Introduction of High Power Semiconductor Lasers

Liu

Zhao

Xiong

et al. 2014

Packaging of High Power Semiconductor Lasers

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Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets

Cited by 73 publications

References 22 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Introduction of High Power Semiconductor Lasers

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