Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit

Sharma, Sitansh; Kumar, S.; Schwingenschlögl, Udo

doi:10.1103/physrevapplied.8.044013

Cited by 136 publications

(99 citation statements)

References 67 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 More recently, atomically thin As and Sb sheets have been extensively studied from both theoretical and experimental aspects, exhibiting wide band gaps, good stability, and low thermal conductivity. [12][13][14] Unlike BP, bulk bismuth (Bi) is a semimetal with an ultrasmall indirect band overlap of 30-40 meV and possesses unique electronic properties in the presence of strong magnetic field. [15][16][17] At room temperature (RT), single crystalline bulk and thin film forms of Bi exhibit extremely high carrier mobility of 5.7 × 10 6 cm 2 V −1 s −1 and 2 × 10 4 cm 2 V −1 s −1 , respectively, suggesting the potential applications in logic transistors.…”

Section: Introductionmentioning

confidence: 99%

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Yang

Lyu

et al. 2019

InfoMat

View full text Add to dashboard Cite

Ever since discovery of graphene, two‐dimensional (2D) materials become a new tool box for information technology. Among the 2D family, ultrathin bismuth (Bi) has attracted a great deal of attention in recent years due to its unique topological insulating properties and large magnetoresistance. However, the scalable synthesis of layered Bi ultrathin films is rarely been reported, which would greatly restrict further fundamental investigation and practical device development. Here, we demonstrate the direct growth of homogeneous and centimeter‐scale layered Bi films by pulsed laser deposition (PLD) technique. The as‐grown Bi film exhibits high‐purity phase and good crystallinity. In addition, both (111) and (110)‐oriented Bi films can be synthesized by precisely controlling the processing temperature. The characterization of optical properties shows a thickness dependent band gaps (0.075‐0.2 eV). Moreover, Bi thin‐film‐based field‐effect transistors have been demonstrated, exhibiting a large carrier mobility of 220 cm2 V−1 s−1. Our work suggests that the PLD‐grown Bi films would hold the potential to develop spintronic applications, electronic and optoelectronic devices used for information science and technology.

show abstract

Section: Introductionmentioning

confidence: 99%

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Yang

Lyu

et al. 2019

InfoMat

View full text Add to dashboard Cite

show abstract

“…Note that instead of using conductivity quantities, conductance quantities are applied to describe thermoelectric properties of nanomaterials and TIs . By using DFT calculations in combination with Boltzmann transport theory, the thermoelectric properties of w ‐arsenene have been investigated …”

Section: Potential Applicationsmentioning

confidence: 99%

“…It was noted that the arsenene exhibited larger ZT values than phosphorene. In the case of b ‐As monolayer, ZT was evaluated to be of 0.17 at a temperature of 700 K, suggesting an excellent thermoelectric response . Upon doping, b ‐As monolayers could become competitors of well‐established thermoelectric materials ( ZT = 0.8).…”

Section: Potential Applicationsmentioning

confidence: 99%

“…136 in combination with Boltzmann transport theory, the thermoelectric properties of w-arsenene have been investigated. 130,[143][144][145][146][147][148] The figure of merit at 300 K for phosphorene, arsenene (w-As), and SnS monolayers along zigzag (ZZ) and armchair (AC) direction was systematically studied, as shown in Figure 14b and c. 130 The calculated anisotropic thermal conductivity at room temperature is 30.4 W/mK along the ZZ, larger than that (7.8 W/mK) of AC directions. 143,144 The temperature dependence of ZT max is presented in Figure 13d and e. 130 It was noted that the arsenene exhibited larger ZT values than phosphorene.…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%

“…In the case of b-As monolayer, ZT was evaluated to be of 0.17 at a temperature of 700 K, suggesting an excellent thermoelectric response. 145 Upon doping, b-As monolayers could become competitors of well-established thermoelectric materials (ZT = 0.8). The n-type doped As monolayer possessed superior thermoelectric properties relative to the p-type doped As monolayer.…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Theoretical studies on tunable electronic structures and potential applications of two‐dimensional arsenene‐based materials

Zhao

et al. 2018

WIREs Comput Mol Sci

View full text Add to dashboard Cite

Research efforts in the area of two‐dimensional (2D) arsenene‐based materials have been fueled up recently due to similarities in honeycomb atomic structures and differences in physical and chemical properties between arsenene and graphene. The pioneering prediction of monolayered arsenene in 2015 and successful synthesis of multilayered arsenene nanoribbons in 2016 have promoted intensive subsequent studies, especially in the theoretical aspect. Density functional theory computations not only revealed desirable fundamental band gap, structural stability, and high carrier mobility of various arsenene‐based materials but also suggested promising applications in future optoelectronic and thermoelectric devices, as well as in the quantum spin Hall devices via surface functionalization and modulation of interlayer interactions. With an aim to present a comprehensive review on the tunable electronic structures of 2D arsenene‐based materials, our focus is placed on the tailoring routes through surface functionalization to modify the electronic and optoelectronic properties of the arsenenes. An emphasis is also given to recent progress in designing topological states in arsenene monolayers. The challenges and outlooks are also laid out in aspects of experimental fabrication, device performance, and arsenene‐based chemical reactions. This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Density Functional Theory

show abstract

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Khan

Tareen

Wang

et al. 2020

Adv Funct Materials

View full text Add to dashboard Cite

The 2D graphene (G) nanosheets (NSs) discovery is amound the foremost revolutionary incidents in materials science history. This discovery has stimulated huge attention in the study of other novel 2D materials (2DMs). This trend might be called modern day "alchemy," where the basic aim is to convert most of periodic table elements into G like 2D structures. Monoelemental, atomically thin 2DMs, called "Xenes" ("X" = group (III-VI)A elements, "ene" suffix that indicates one atom thick 2D layer of atoms) which are a newly invented family among nanomaterials. The number of predicted and experimentally synthesized 2D Xene materials of group IVA, i.e., G's siblings, has gained attention in nanosize devices. Such materials involve buckle structures that have recently been experimentally fabricated. The 2D Xene materials analog to G offer exciting potential for novel sensing applications. The group IVA Xenes, in cooperation with their ligandfunctionalized derivatives, arrange in a honeycomb lattice analogous to G but through a changeable degree of buckling. Their electronic structure ranges from trivial insulators passing via semiconductors with tunable gaps, to semimetallic, depending on substrate, chemical functionalization, and strain. In this review, different potential synthesis methods for group IVA 2D Xenes are briefly presented. A brief overview of their properties obtained theoretically and experimentally is presented, and finally their potential sensing applications are discussed.

show abstract

Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit

Cited by 136 publications

References 67 publications

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Theoretical studies on tunable electronic structures and potential applications of two‐dimensional arsenene‐based materials

Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects

Contact Info

Product

Resources

About