Arsenic diffusion in relaxed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>

Laitinen, Päivi; Riihimäki, I.; Räisänen, J.

doi:10.1103/physrevb.68.155209

Cited by 41 publications

(19 citation statements)

References 40 publications

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“…Since the early work of McVay and DuCharme, 2 several experimental studies [3][4][5] have been carried out to measure diffusivity values for germanium in SiGe alloys with varying concentration of germanium. These experiments reveal that activation energy ͑E a ͒ is dependent on germanium concentration.…”

Section: Introductionmentioning

confidence: 99%

Germanium diffusion mechanisms in silicon from first principles

et al. 2007

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We present an extensive numerical study of the basic mechanisms that describe germanium diffusion in silicon mediated by point defects. This diffusion can be created by vacancies, interstitial atoms, or fourfold coordinated defects. All energies and elementary barriers have been precisely determined by ab initio calculations. The results for vacancies are compared with recently published values. The complex interstitial landscape is systematized and the key role of the hexagonal location is stressed as a halfway stable state between two, more stable, dumbbell ͓110͔ states. Finally, the mechanism of a concerted exchange linking two fourfold coordinated defects is fully calculated. Its activation energy is higher than for interstitial or vacancy mediated movements.

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Section: Introductionmentioning

confidence: 99%

Germanium diffusion mechanisms in silicon from first principles

et al. 2007

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“…For instance, annealing energetics and diffusion of the E center are under debate. [13][14][15][16][17][18][19][20][21] In particular, experimental documentation is insufficient and largely based on high-temperature dopant redistribution measurements, taking inevitable risks of modifying the delicate Si 1−x Ge x matrix itself. Moreover, providing a reliable experimental estimate for E center stability in Si 1−x Ge x would make it possible to compare with recently published theoretical data, allowing for the calibration of the models.…”

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confidence: 99%

Stabilization of Ge-rich defect complexes originating fromEcenters inSi1−xGex:

et al. 2010

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Thermal evolution of vacancy complexes was studied in P-doped ͓͑P͔ =10 18 cm −3 ͒ proton irradiated Si 1−x Ge x with Ge contents of 10%, 20%, and 30% in the range of 250-350°C using positron annihilation spectroscopy. The radiation damage recovers in the course of anneals but the final state differs from that in as-grown samples indicating the presence of small Ge clusters in the samples, contrary to the initially random Ge distribution. The activation energy for the annealing process was estimated to be 1.4Ϯ 0.3 eV and attributed to the dissociation energy of the vacancy-phosphorus-germanium ͑V-P-Ge͒ complex.

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“…15͒ and Ge ͑Ref. Ge self-diffusion 17 shows in the Ge rich region an exponential diffusion coefficient increase as a function of increasing x value and also several group IV and V elements [18][19][20] show a similar trend. By the time prominent diffusion of 7 Be takes place during the annealing cycle, practically no Li atoms are present within the diffusion zone.…”

Section: Resultsmentioning

confidence: 82%

Diffusion of beryllium in Ge and Si–Ge alloys

Koskelo

Pusa

Räisänen

et al. 2008

Journal of Applied Physics

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Diffusion of implanted 7 Be in Si 1−x Ge x ͑x = 0.20, 0.65, 1.00͒ systems has been studied under intrinsic conditions in the temperature range of 460-720°C by the modified radiotracer technique. Arrhenius-type behavior with activation enthalpies of 2.0 eV for Ge and 2.5 eV for the Si-Ge alloys was noted. Unexpectedly, the diffusivity of beryllium is higher in the Si 0.80 Ge 0.20 material than in Si 0.35 Ge 0.65 which is discussed in terms of possible prevailing diffusion mechanisms. It is proposed that Be diffusion in Si 1−x Ge x systems is dissociative mechanism dominated for germanium rich materials and the kick-out ͑or interstitialcy͒ mechanism dominates in silicon rich materials.

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Arsenic diffusion in relaxedSi1−xGex

Cited by 41 publications

References 40 publications

Germanium diffusion mechanisms in silicon from first principles

Germanium diffusion mechanisms in silicon from first principles

Stabilization of Ge-rich defect complexes originating fromEcenters inSi1−xGex:

Diffusion of beryllium in Ge and Si–Ge alloys

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