Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion

Sandhu, Jaspreet; Reuter, J.

doi:10.1147/rd.156.0464

Cited by 28 publications

(9 citation statements)

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“…Talc was used as a solid pressure-transmitting medium to generate pressure inside the test chamber [ 111 ]. The As-Si equilibrium phase diagram at a pressure of ~39.5 atm was evaluated by Olesinski and Abbaschian [ 112 ] based on the available experimental data [ 42 , 113 , 114 , 115 , 116 , 117 , 118 , 119 ] and thermodynamic descriptions [ 120 , 121 , 122 , 123 ], as shown in Figure 7 . The liquid phase boundary of the As-Si system in the Si-rich side, up to the eutectic point at around 56 at % Si, was drawn as dotted line in the work of Olesinski and Abbaschian [ 112 ] due to the large disagreement among the available data [ 113 , 115 ].…”

Section: Phase Diagramsmentioning

confidence: 99%

“…Several research works [ 118 , 125 , 126 , 127 , 128 , 129 , 130 , 131 ] focused on the Si-rich side to determine the solid solubility limits of arsenic in silicon. According to Olesinski and Abbaschian [ 112 ], the maximum solubility of As was reported as 3.5 at % As at ~1200 °C based on the work of Sandhu and Reuter [ 117 ], who determined the solvus line from the vapor pressure measurements using radiotracer and chemical methods. Other experimental points were excluded, because they were acquired by electrical conductivity methods that are known to give high error of measurements in this system.…”

Section: Phase Diagramsmentioning

confidence: 99%

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Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis.

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Section: Phase Diagramsmentioning

confidence: 99%

Section: Phase Diagramsmentioning

confidence: 99%

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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“…19,20 A set of (224) reciprocal space map is shown in Fig. During the growth of the dilute nitride layer, we assume that the As incorporation is unaffected by the N incorporation in the top GaNAsP layer based on the fact that the P vapor pressure is much higher than that of As.…”

Section: Resultsmentioning

confidence: 99%

Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy

Kuang¹,

Chen²,

Li³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This was Paper 191 presented at the New York, New York, Meeting of the Society, Oct. [13][14][15][16][17] 1974.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Accurate Theoretical Arsenic Diffusion Profiles in Silicon from Processing Data

Jain

Overstraeten

1975

J. Electrochem. Soc.

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H groove depth, micrometer U normalized underetch 8 distance between the {112} plane intersection line and a parallel line traced from the corner of the oxide limit, micrometer 17. W. Kern and D. A. Puotinen, RCA Rev., 31, 187 (1970).ABSTRACT An accurate knowledge of the impurity distribution in a semiconductor device is essential for its proper characterization. This task can be made simpler if one knows properly the concentration dependent impurity diffusion coefficient. In recent years various arsenic diffusion models were developed to explain the experimental results, but it seems that a better physical model is required. The present work gives the arsenic concentration dependent diffusivity in silicon considering different mechanisms involved during the diffusion process. The effects of heavy doping and high temperature have been successfully included in the present work. Attempts are made to calculate theoretical arsenic diffusion profiles only from the knowledge of the processing data. It is found that our physical model gives quite good results which are in reasonable agreement with the experimental profiles. Key words: arsenic diffusion profiles, silicon, heavy doping and high temperature effects, concentration dependent diffusion coefficient, processing data, ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-03-14 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-03-14 to IP

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Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion

Cited by 28 publications

References 0 publications

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy

Accurate Theoretical Arsenic Diffusion Profiles in Silicon from Processing Data

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